IXFV12N80PS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXFV12N80PS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 360 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 250 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm
Paquete / Cubierta: PLUS220SMD
- Selección de transistores por parámetros
IXFV12N80PS Datasheet (PDF)
ixfh12n90p ixfv12n90p-s.pdf

Preliminary Technical InformationIXFH12N90P VDSS = 900VPolarTM Power MOSFETIXFV12N90P ID25 = 12AHiPerFETTM RDS(on) 900m IXFV12N90PS trr 300nsN-Channel Enhancement ModeAvalanche RatedPLUS220 (IXFV)Fast Intrinsic DiodeGSymbol Test Conditions Maximum RatingsDSVDSS TJ = 25C to 150C 900 VD (TAB)VDGR TJ
ixfh12n120p ixfv12n120p ixfv12n120ps.pdf

IXFH12N120P VDSS = 1200VPolarTM Power MOSFETIXFV12N120P ID25 = 12AHiPerFETTM RDS(on) 1.35 IXFV12N120PS N-Channel Enhancement Modetrr 300nsAvalanche RatedFast Intrinsic Diode PLUS220 (IXFV)GDSSymbol Test Conditions Maximum RatingsD (TAB)VDSS TJ = 25C to 150C 1200 VPLUS220SMD (IXFV_S)VDGR TJ = 25C to 1
ixfh110n10p ixfv110n10p.pdf

IXFH 110N10P VDSS = 100 VPolarHTTM HiPerFETIXFV 110N10P ID25 = 110 APower MOSFET IXFV 110N10PS RDS(on) 15 m N-Channel Enhancement Modetrr 150 nsFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXFH)VDSS TJ = 25 C to 175 C 100 VVDGR TJ = 25 C to 175 C; RGS = 1 M 100
ixfh18n60p ixfv18n60p.pdf

IXFH 18N60P VDSS = 600 VPolarHVTM HiPerFETIXFV 18N60P ID25 = 18 APower MOSFET IXFV 18N60PS RDS(on) 400 m N-Channel Enhancement Modetrr 200 nsFast Intrinsic DiodeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 AD (IXFH)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VVGS Co
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: FC40SA50FKP | AOLF66610 | VS3618AE | 2SK1336 | WSD4066DN | CSD17310Q5A | IPW60R180C7
History: FC40SA50FKP | AOLF66610 | VS3618AE | 2SK1336 | WSD4066DN | CSD17310Q5A | IPW60R180C7



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DHF10H035R | DHF100N03B13 | DHF035N04 | DHEZ24B31 | DHESJ17N65 | DHESJ13N65 | DHESJ11N65 | DHE9Z24 | DHE90N055R | DHE90N045R | DHE85N08 | DHE8290 | DHE80N08B22 | DHE8004 | DHE50N15 | DHE50N06FZC
Popular searches
2n1815 | 2sa1103 | 2sb435 | 2sc1096 | 2sc2058 | a1693 datasheet | bdw94c equivalent | c2389