IXFX26N100P MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Principales características: IXFX26N100P

7.1. Size:251K ixys
ixfk26n90 ixfx26n90 ixfk25n90 ixfx25n90.pdf pdf_icon

www.DataSheet4U.com VDSS IDSS RDS(on) trr HiPerFETTM Power MOSFETs IXFK/IXFX 26N90 900 V 26 A 0.30 W 250 ns IXFK/IXFX 25N90 900 V 25 A 0.33 W 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 900 V VGS Continuous 20 V (TAB) G VGSM Transient 30 V D S ID2

7.2. Size:104K ixys
ixfk26n60q ixfx26n60q.pdf pdf_icon

IXFK 26N60Q VDSS = 600 V HiPerFETTM IXFX 26N60Q ID25 = 26 A Power MOSFETs RDS(on) = 0.25 Q-Class trr 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS Conti

8.1. Size:122K ixys
ixfk260n17t ixfx260n17t.pdf pdf_icon

Advance Technical Information GigaMOSTM VDSS = 170V IXFK260N17T ID25 = 260A Power MOSFET IXFX260N17T RDS(on) 6.5m trr 200ns N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C 170 V D (TAB) S VDGR TJ = 25 C to 175 C, RGS =

Otros transistores... IXFX220N15P , IXFX220N17T2 , IXFX230N20T , IXFX240N15T2 , IXFX24N100F , IXFX24N90Q , IXFX250N10P , IXFX25N90 , TK10A60D , IXFX26N120P , IXFX26N60Q , IXFX27N80Q , IXFX30N100Q2 , IXFX30N110P , IXFX320N17T2 , IXFX32N100P , IXFX32N100Q3 .