IXFX26N120P Todos los transistores

 

IXFX26N120P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXFX26N120P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 960 W

Tensión drenaje-fuente (Vds): 1200 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 26 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 6.5 V

Carga de compuerta (Qg): 255 nC

Tiempo de elevación (tr): 300 nS

Resistencia drenaje-fuente RDS(on): 0.46 Ohm

Empaquetado / Estuche: PLUS247

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IXFX26N120P Datasheet (PDF)

3.1. ixfk26n60q ixfx26n60q.pdf Size:104K _ixys

IXFX26N120P
IXFX26N120P

IXFK 26N60Q VDSS = 600 V HiPerFETTM IXFX 26N60Q ID25 = 26 A Power MOSFETs Ω RDS(on) = 0.25 Ω Ω Ω Ω Q-Class ≤ ≤ trr ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Conti

3.2. ixfk26n90 ixfx26n90 ixfk25n90 ixfx25n90.pdf Size:251K _ixys

IXFX26N120P
IXFX26N120P

www.DataSheet4U.com VDSS IDSS RDS(on) trr HiPerFETTM Power MOSFETs IXFK/IXFX 26N90 900 V 26 A 0.30 W 250 ns IXFK/IXFX 25N90 900 V 25 A 0.33 W 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 900 V VGS Continuous ±20 V (TAB) G VGSM Transient ±30 V D S ID2

 4.1. ixfk260n17t ixfx260n17t.pdf Size:122K _ixys

IXFX26N120P
IXFX26N120P

Advance Technical Information GigaMOSTM VDSS = 170V IXFK260N17T ID25 = 260A Power MOSFET IXFX260N17T ? ? RDS(on) ? 6.5m? ? ? ? ? ? ? ? trr ? 200ns ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G VDSS TJ = 25C to 175C 170 V D (TAB) S VDGR TJ = 25C to 175C, RGS = 1M? 170 V VGSS Continuous 20

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