IXFX44N50F Todos los transistores

 

IXFX44N50F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXFX44N50F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 500 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Id|ⓘ - Corriente continua de drenaje: 44 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 250 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
   Paquete / Cubierta: PLUS247

 Búsqueda de reemplazo de MOSFET IXFX44N50F

 

Principales características: IXFX44N50F

 ..1. Size:126K  ixys
ixfx44n50f ixfk44n50f.pdf pdf_icon

IXFX44N50F

HiPerRFTM VDSS = 500V IXFK44N50F ID25 = 44A Power MOSFETs IXFX44N50F RDS(on) 120m F-Class MegaHertz Switching trr 250ns Single MOSFET Die TO-264 (IXFK) N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr G D Tab S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C

 5.1. Size:574K  ixys
ixfk48n50q ixfx48n50q ixfk44n50q ixfx44n50q.pdf pdf_icon

IXFX44N50F

VDSS ID25 RDS(on) HiPerFETTM IXFK/IXFX 48N50Q 500 V 48 A 100 m Power MOSFETs IXFK/IXFX 44N50Q 500 V 44 A 120 m Q-CLASS trr 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg PLUS 247TM (IXFX) High dV/dt, Low trr Symbol Test Conditions Maximum Ratings (TAB) G D VDSS TJ = 25 C to 150

 6.1. Size:100K  ixys
ixfx44n55q.pdf pdf_icon

IXFX44N50F

Advance Technical Information IXFK 44N55Q VDSS = 550 V HiPerFETTM IXFX 44N55Q ID25 = 44 A Power MOSFETs RDS(on) = 120 m Q-CLASS trr 250 ns Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg PLUS 247TM (IXFX) High dV/dt, Low t rr Symbol Test Conditions Maximum Ratings (TAB) G D VDSS TJ = 25 C to 150 C 550

 7.1. Size:233K  ixys
ixfk44n80p ixfx44n80p.pdf pdf_icon

IXFX44N50F

PolarTM IXFK44N80P VDSS = 800V HiperFETTM ID25 = 44A IXFX44N80P Power MOSFET RDS(on) 190m N-Channel Enhancement Mode TO-264 (IXFK) Avalanche Rated Fast Intrinsic Diode G D S Symbol Test Conditions Maximum Ratings Tab VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C, RGS = 1M 800 V PLUS247 (IXFX) VGSS Continuous 30

Otros transistores... IXFX32N50 , IXFX32N80P , IXFX32N80Q3 , IXFX360N10T , IXFX360N15T2 , IXFX38N80Q2 , IXFX40N90P , IXFX420N10T , IRFZ24N , IXFX44N50Q , IXFX44N80P , IXFX44N80Q3 , IXFX48N55 , IXFX48N60P , IXFX48N60Q3 , IXFX520N075T2 , IXFX52N60Q2 .

 

 
Back to Top

 


social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AP30H150K | AP30H150G | AP3065SD | AP3004S | AP3003 | AP3002S | AP2N65K | AP2716SD | AP2716QD | AP2716KD | AP2714SD | AP2714QD | AP25P30Q | AP25P06Q | AP25P06K | AP25N06Q

 

 

 
Back to Top

 

Popular searches

irf9540 | 2n3055 datasheet | 2sc945 | irfp250n | irf9540n | bd139 datasheet | irf9640 | 2n3053

 


 
.