IXTA160N10T7 Todos los transistores

 

IXTA160N10T7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTA160N10T7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 430 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 160 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 100 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: TO263
 

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IXTA160N10T7 Datasheet (PDF)

 ..1. Size:164K  ixys
 ixta160n10t7.pdf pdf_icon

IXTA160N10T7

Preliminary Technical InformationVDSS = 100 VIXTA160N10T7TrenchMVTMID25 = 160 APower MOSFET RDS(on) 7.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175C; RGS = 1 M 100 VVGSM Transient 30 V1ID25 TC = 25C 160 A

 3.1. Size:174K  ixys
 ixta160n10t ixtp160n10t.pdf pdf_icon

IXTA160N10T7

Preliminary Technical InformationIXTA160N10T VDSS = 100 VTrenchMVTMIXTP160N10T ID25 = 160 APower MOSFET RDS(on) 7.0 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 175C 100 VTO-220 (IXTP)VDGR TJ = 25C to 175C; RGS = 1 M 100 VVGSM Transient 30 V

 6.1. Size:197K  ixys
 ixta160n075t7.pdf pdf_icon

IXTA160N10T7

Preliminary Technical InformationVDSS = 75 VIXTA160N075T7TrenchMVTMID25 = 160 APower MOSFET RDS(on) 6.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25 C to 175 C75 VVDGR TJ = 25 C to 175 C; RGS = 1 M 75 VVGSM Transient 20 V1ID25 TC = 25

 6.2. Size:174K  ixys
 ixta160n075t ixtp160n075t.pdf pdf_icon

IXTA160N10T7

Preliminary Technical InformationIXTA160N075T VDSS = 75 VTrenchMVTMIXTP160N075T ID25 = 160 APower MOSFET RDS(on) 6.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum Ratings TO-263 (IXTA)VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VGVGSM Transient 20 V S D (TAB)ID25 TC = 25C 16

MOSTRAR MÁS

Otros transistores... IXTA152N085T , IXTA152N085T7 , IXTA15P15T , IXTA160N04T2 , IXTA160N075T , IXTA160N075T7 , IXTA160N085T , IXTA160N10T , RFP50N06 , IXTA16N50P , IXTA170N075T2 , IXTA180N085T , IXTA180N085T7 , IXTA180N10T , IXTA180N10T7 , IXTA182N055T , IXTA182N055T7 .

History: AON6366E | SQV120N10-3M8 | NP60N04MUK | NP60N04HLF | IRL60SL216 | FS10SM-10 | IPU06N03LAG

 

 
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