IXTA180N10T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTA180N10T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 480 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 180 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 72 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0064 Ohm

Encapsulados: TO263

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IXTA180N10T datasheet

 ..1. Size:154K  ixys
 ixta180n10t ixtp180n10t.pdf pdf_icon

IXTA180N10T

IXTA180N10T VDSS = 100V TrenchMVTM IXTP180N10T ID25 = 180A Power MOSFET RDS(on) 6.4m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 175 C 100 V TO-220 (IXTP) VDGR TJ = 25 C to 175 C, RGS = 1M 100 V VGSM Transient 30 V ID25 TC = 25 C 180 A ILRMS Lead Cur

 0.1. Size:197K  ixys
 ixta180n10t7.pdf pdf_icon

IXTA180N10T

PreliminaryTechnical Information VDSS = 100 V IXTA180N10T7 TrenchMVTM ID25 = 180 A Power MOSFET RDS(on) 6.4 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGSM Transient 30 V 1 ID25 TC = 25

 6.1. Size:197K  ixys
 ixta180n085t7.pdf pdf_icon

IXTA180N10T

Preliminary Technical Information VDSS = 85 V IXTA180N085T7 TrenchMVTM ID25 = 180 A Power MOSFET RDS(on) 5.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V 1 ID25 TC = 25

 6.2. Size:108K  ixys
 ixta180n055t ixtp180n055t ixtq180n055t.pdf pdf_icon

IXTA180N10T

Advance Technical Information IXTQ 180N055T VDSS = 55 V Trench Gate IXTA 180N055T ID25 = 180 A Power MOSFET IXTP 180N055T RDS(on) = 4.0 m N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C55 V G VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V D (TAB) S VGSM 20 V TO-220 (IXTP) ID25 TC = 25 C 180 A IDRM

MOSTRAR MÁS

Otros transistores... IXTA160N075T7, IXTA160N085T, IXTA160N10T, IXTA160N10T7, IXTA16N50P, IXTA170N075T2, IXTA180N085T, IXTA180N085T7, IRF520, IXTA180N10T7, IXTA182N055T, IXTA182N055T7, IXTA18P10T, IXTA1N100P, IXTA1N120P, IXTA1N80, IXTA1N80P