IXTA230N075T2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTA230N075T2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 480 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 230 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 66 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm

Encapsulados: TO263

 Búsqueda de reemplazo de IXTA230N075T2 MOSFET

- Selecciónⓘ de transistores por parámetros

 

IXTA230N075T2 datasheet

 ..1. Size:310K  ixys
ixta230n075t2 ixtp230n075t2.pdf pdf_icon

IXTA230N075T2

TrenchT2TM VDSS = 75V IXTA230N075T2 ID25 = 230A Power MOSFET IXTP230N075T2 RDS(on) 4.2m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C, RGS = 1M 75 V VGSM Transient 20 V G D S ID25 TC = 25 C 2

 9.1. Size:198K  ixys
ixta200n075t7.pdf pdf_icon

IXTA230N075T2

Preliminary Technical Information VDSS = 75 V IXTA200N075T7 TrenchMVTM ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V VGSM Transient 20 V 1 ID25 TC = 25

 9.2. Size:214K  ixys
ixta220n055t ixtp220n055t.pdf pdf_icon

IXTA230N075T2

Preliminary Technical Information IXTA220N055T VDSS = 55 V TrenchMVTM IXTP220N055T ID25 = 220 A Power MOSFET RDS(on) 4.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V G VGSM Transient 20 V S (TAB) ID25 T

 9.3. Size:175K  ixys
ixta220n075t ixtp220n075t.pdf pdf_icon

IXTA230N075T2

Preliminary Technical Information IXTA220N075T VDSS = 75 V TrenchMVTM IXTP220N075T ID25 = 220 A Power MOSFET RDS(on) 4.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 2

Otros transistores... IXTA200N085T, IXTA200N085T7, IXTA220N04T2, IXTA220N04T2-7, IXTA220N055T, IXTA220N055T7, IXTA220N075T, IXTA220N075T7, AO4407A, IXTA230N075T2-7, IXTA240N055T, IXTA240N055T7, IXTA24P085T, IXTA260N055T2, IXTA260N055T2-7, IXTA26P10T, IXTA26P20P