IXTA26P20P Datasheet. Equivalente

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 ixta26p20p ixth26p20p ixtp26p20p ixtq26p20p.pdf

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 ixta260n055t2 ixtp260n055t2.pdf

TrenchT2TM IXTA260N055T2 VDSS = 55V IXTP260N055T2 ID25 = 260A Power MOSFET RDS(on) 3.3m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C 55 V S (TAB) VDGR TJ = 25 C to 175 C, RGS = 1M 55 V VGSM Transient 20 V TO-220 (IXTP) ID25 TC = 25 C 260 A ILRM

 9.1. Size:198K  ixys
 ixta200n075t7.pdf

Preliminary Technical Information VDSS = 75 V IXTA200N075T7 TrenchMVTM ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V VGSM Transient 20 V 1 ID25 TC = 25

 9.2. Size:214K  ixys
 ixta220n055t ixtp220n055t.pdf

Preliminary Technical Information IXTA220N055T VDSS = 55 V TrenchMVTM IXTP220N055T ID25 = 220 A Power MOSFET RDS(on) 4.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V G VGSM Transient 20 V S (TAB) ID25 T

 9.3. Size:175K  ixys
 ixta220n075t ixtp220n075t.pdf

Preliminary Technical Information IXTA220N075T VDSS = 75 V TrenchMVTM IXTP220N075T ID25 = 220 A Power MOSFET RDS(on) 4.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 2

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 ixta20n65x ixth20n65x ixtp20n65x.pdf

Preliminary Technical Information X-Class VDSS = 650V IXTA20N65X Power MOSFET ID25 = 20A IXTP20N65X RDS(on) 210m IXTH20N65X N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V VG

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 ixta2n80 ixtp2n80.pdf

VDSS = 800 V High Voltage MOSFET IXTA 2N80 ID25 = 2 A IXTP 2N80 RDS(on) = 6.2 N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25 C2 A

 9.6. Size:215K  ixys
 ixta200n085t ixtp200n085t.pdf

Preliminary Technical Information IXTA 200N085T VDSS = 85 V TrenchMVTM IXTP 200N085T ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V G VGSM Transient 20 V S (TAB) ID25

 9.7. Size:173K  ixys
 ixta240n055t ixtp240n055t.pdf

Preliminary Technical Information IXTA240N055T VDSS = 55 V TrenchMVTM IXTP240N055T ID25 = 240 A Power MOSFET RDS(on) 3.6 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 2

 9.8. Size:76K  ixys
 ixta2n100 ixtp2n100.pdf

High Voltage VDSS = 1000 V IXTA 2N100 MOSFET ID25 = 2 A IXTP 2N100 RDS(on) = 7 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 1000 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1000 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25 C2 A IDM TC = 25 C, pulse width limited by

 9.9. Size:163K  ixys
 ixta200n085t7.pdf

Preliminary Technical Information VDSS = 85 V IXTA200N085T7 TrenchMVTM ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V 1 ID25 TC = 25 C 200 A 7

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 ixta270n04t4 ixth270n04t4 ixtp270n04t4.pdf

Advance Technical Information VDSS = 40V TrenchT4TM IXTA270N04T4 ID25 = 270A Power MOSFET IXTP270N04T4 RDS(on) 2.4m IXTH270N04T4 N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C40 V G D D (Tab) S VDGR TJ = 25 C to 175 C, RG

 9.11. Size:310K  ixys
 ixta230n075t2 ixtp230n075t2.pdf

TrenchT2TM VDSS = 75V IXTA230N075T2 ID25 = 230A Power MOSFET IXTP230N075T2 RDS(on) 4.2m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S D (Tab) TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C, RGS = 1M 75 V VGSM Transient 20 V G D S ID25 TC = 25 C 2

 9.12. Size:163K  ixys
 ixta220n075t7.pdf

Preliminary Technical Information VDSS = 75 V IXTA220N075T7 TrenchMVTM ID25 = 220 A Power MOSFET RDS(on) 4.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V VGSM Transient 20 V 1 ID25 TC = 25 C 220 A 7

 9.13. Size:197K  ixys
 ixta220n055t7.pdf

Preliminary Technical Information VDSS = 55 V IXTA220N055T7 TrenchMVTM ID25 = 220 A Power MOSFET RDS(on) 4.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V VGSM Transient 20 V 1 ID25 TC = 25

 9.14. Size:162K  ixys
 ixta240n055t7.pdf

Preliminary Technical Information VDSS = 55 V IXTA240N055T7 TrenchMVTM ID25 = 240 A Power MOSFET RDS(on) 3.6 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V VGSM Transient 20 V 1 ID25 TC = 25 C 240 A 7

 9.15. Size:215K  ixys
 ixta200n075t ixtp200n075t.pdf

Preliminary Technical Information IXTA200N075T VDSS = 75 V TrenchMVTM IXTP200N075T ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V G VGSM Transient 20 V S (TAB) ID25