IXTA2R4N120P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IXTA2R4N120P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 37 nC
   trⓘ - Tiempo de subida: 920 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7.5 Ohm
   Paquete / Cubierta: TO263

Búsqueda de reemplazo de MOSFET IXTA2R4N120P

IXTA2R4N120P Datasheet (PDF)

9.1. Size:198K ixys
ixta200n075t7.pdf

Preliminary Technical InformationVDSS = 75 VIXTA200N075T7TrenchMVTMID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25 C to 175 C75 VVDGR TJ = 25 C to 175 C; RGS = 1 M 75 VVGSM Transient 20 V1ID25 TC = 25

9.2. Size:214K ixys
ixta220n055t ixtp220n055t.pdf

Preliminary Technical InformationIXTA220N055T VDSS = 55 VTrenchMVTMIXTP220N055T ID25 = 220 APower MOSFET RDS(on) 4.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VGVGSM Transient 20 VS(TAB)ID25 T

9.3. Size:175K ixys
ixta220n075t ixtp220n075t.pdf

Preliminary Technical InformationIXTA220N075T VDSS = 75 VTrenchMVTMIXTP220N075T ID25 = 220 APower MOSFET RDS(on) 4.5 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VGVGSM Transient 20 VS(TAB)ID25 TC = 25C 2

9.4. Size:231K ixys
ixta20n65x ixth20n65x ixtp20n65x.pdf

Preliminary Technical InformationX-Class VDSS = 650VIXTA20N65XPower MOSFET ID25 = 20AIXTP20N65X RDS(on) 210m IXTH20N65XN-Channel Enhancement ModeTO-263 (IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VVG

9.5. Size:248K ixys
ixta260n055t2 ixtp260n055t2.pdf

TrenchT2TM IXTA260N055T2 VDSS = 55V IXTP260N055T2 ID25 = 260A Power MOSFET RDS(on) 3.3m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25C to 175C 55 V S (TAB) VDGR TJ = 25C to 175C, RGS = 1M 55 VVGSM Transient 20 V TO-220 (IXTP) ID25 TC = 25C 260 AILRM

9.6. Size:113K ixys
ixta2n80 ixtp2n80.pdf

VDSS = 800 VHigh Voltage MOSFET IXTA 2N80ID25 = 2 AIXTP 2N80 RDS(on) = 6.2 N-Channel Enhancement ModeAvalanche Energy RatedPreliminary DataSymbol Test Conditions Maximum Ratings TO-220AB (IXTP)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 VDSID25 TC = 25C2 A

9.7. Size:215K ixys
ixta200n085t ixtp200n085t.pdf

Preliminary Technical InformationIXTA 200N085T VDSS = 85 VTrenchMVTMIXTP 200N085T ID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VGVGSM Transient 20 VS(TAB)ID25

9.8. Size:173K ixys
ixta240n055t ixtp240n055t.pdf

Preliminary Technical InformationIXTA240N055T VDSS = 55 VTrenchMVTMIXTP240N055T ID25 = 240 APower MOSFET RDS(on) 3.6 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25C to 175C55 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VGVGSM Transient 20 VS(TAB)ID25 TC = 25C 2

9.9. Size:76K ixys
ixta2n100 ixtp2n100.pdf

High Voltage VDSS = 1000 VIXTA 2N100MOSFET ID25 = 2 AIXTP 2N100RDS(on) = 7 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-220AB (IXTP)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 VDSID25 TC = 25C2 AIDM TC = 25C, pulse width limited by

9.10. Size:163K ixys
ixta200n085t7.pdf

Preliminary Technical InformationVDSS = 85 VIXTA200N085T7TrenchMVTMID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25C to 175C85 VVDGR TJ = 25C to 175C; RGS = 1 M 85 VVGSM Transient 20 V1ID25 TC = 25C 200 A 7

9.11. Size:163K ixys
ixta270n04t4 ixth270n04t4 ixtp270n04t4.pdf

Advance Technical InformationVDSS = 40VTrenchT4TMIXTA270N04T4ID25 = 270APower MOSFET IXTP270N04T4 RDS(on) 2.4m IXTH270N04T4N-Channel Enhancement ModeTO-263 AA (IXTA)Avalanche RatedGSD (Tab)TO-220AB (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C40 VGDD (Tab)SVDGR TJ = 25C to 175C, RG

9.12. Size:184K ixys
ixta26p20p ixth26p20p ixtp26p20p ixtq26p20p.pdf

Preliminary Technical InformationIXTA26P20P VDSS = - 200VPolarPTMIXTH26P20P ID25 = - 26APower MOSFET IXTP26P20P RDS(on) 170m P-Channel Enhancement ModeAvalanche RatedIXTQ26P20PTO-263 (IXTA) TO-247 (IXTH) TO-220 (IXTP)GSGD(TAB)D(TAB)GD(TAB)DS DSSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25C to 175

9.13. Size:310K ixys
ixta230n075t2 ixtp230n075t2.pdf

TrenchT2TM VDSS = 75VIXTA230N075T2ID25 = 230APower MOSFETIXTP230N075T2 RDS(on) 4.2m N-Channel Enhancement ModeAvalanche Rated TO-263 (IXTA)GSD (Tab)TO-220 (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C, RGS = 1M 75 VVGSM Transient 20 VGDSID25 TC = 25C 2

9.14. Size:163K ixys
ixta220n075t7.pdf

Preliminary Technical InformationVDSS = 75 VIXTA220N075T7TrenchMVTMID25 = 220 APower MOSFET RDS(on) 4.5 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VVGSM Transient 20 V1ID25 TC = 25C 220 A 7

9.15. Size:197K ixys
ixta220n055t7.pdf

Preliminary Technical InformationVDSS = 55 VIXTA220N055T7TrenchMVTMID25 = 220 APower MOSFET RDS(on) 4.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VVGSM Transient 20 V1ID25 TC = 25

9.16. Size:162K ixys
ixta240n055t7.pdf

Preliminary Technical InformationVDSS = 55 VIXTA240N055T7TrenchMVTMID25 = 240 APower MOSFET RDS(on) 3.6 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25C to 175C55 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VVGSM Transient 20 V1ID25 TC = 25C 240 A 7

9.17. Size:215K ixys
ixta200n075t ixtp200n075t.pdf

Preliminary Technical InformationIXTA200N075TVDSS = 75 VTrenchMVTMIXTP200N075TID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C75 VVDGR TJ = 25 C to 175 C; RGS = 1 M 75 VGVGSM Transient 20 VS(TAB)ID25

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