IXTA32P05T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IXTA32P05T
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 32 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 46 nC
   trⓘ - Tiempo de subida: 26 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.039 Ohm
   Paquete / Cubierta: TO263

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IXTA32P05T Datasheet (PDF)

9.1. Size:237K ixys
ixta3n50p ixtp3n50p ixty3n50p.pdf

IXTA 3N50P VDSS = 500 VPolarHVTMIXTP 3N50P ID25 = 3.6 APower MOSFET IXTY 3N50P RDS(on) 2.0 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGSS 30 VVGSM 40 V(TAB)GDSID25 TC = 25 C 3.6 AIDM

9.2. Size:168K ixys
ixta3n50d2-ixtp3n50d2.pdf

Depletion Mode VDSX = 500VIXTA3N50D2MOSFET ID(on) > 3AIXTP3N50D2 RDS(on) 1.5 N-ChannelTO-263 AA (IXTA)GSymbol Test Conditions Maximum RatingsSVDSX TJ = 25C to 150C 500 VD (Tab)VGSX Continuous 20 VVGSM Transient 30 VTO-220AB (IXTP)PD TC = 25C 125 WTJ - 55 ... +150 CTJM 150 CTstg - 55 ... +150 CGDD (Tab)

9.3. Size:562K ixys
ixta3n120 ixtp3n120.pdf

VDSS ID25 RDS(on)High VoltageIXTA 3N120Power MOSFETs 1200 V 3 A 4.5 IXTP 3N120N-Channel Enhancement ModeAvalanche Rated, High dv/dtSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 V DSID25 TC = 25C3 AIDM TC =

9.4. Size:560K ixys
ixta3n120trl.pdf

9.5. Size:252K ixys
ixta36n30p ixtp36n30p ixtq36n30p.pdf

IXTA 36N30P VDSS = 300 VPolarHTTMIXTP 36N30P ID25 = 36 APower MOSFET IXTQ 36N30P RDS(on) 110 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 300 VGVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VSD(TAB)VGS Continuous 30 VVGSM Transient 40 VTO-220

9.6. Size:184K ixys
ixta3n100d2hv.pdf

Preliminary Technical InformationHigh Voltage VDSX = 1000VIXTA3N100D2HVDepletion Mode ID(on) > 3AMOSFET RDS(on) 6 DN-ChannelGTO-263HVSGSD (Tab)Symbol Test Conditions Maximum RatingsVDSX TJ = 25C to 150C 1000 VG = Gate D = DrainVGSX Continuous 20 VS = Source Tab = DrainVGSM Transient 30 VPD TC = 25C 1

9.7. Size:138K ixys
ixta3n120hv.pdf

High Voltage VDSS = 1200VIXTA3N120HVID25 = 3APower MOSFET RDS(on) 4.5 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-263Symbol Test Conditions Maximum RatingsGSVDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C, RGS = 1M 1200 V D (Tab)VGSS Continuous 20 VVGSM Transient 30 VG = Gate D

9.8. Size:150K ixys
ixta3n100p ixth3n100p ixtp3n100p.pdf

IXTA3N100P VDSS = 1000VPolar VHVTMIXTH3N100P ID25 = 3APower MOSFET IXTP3N100P RDS(on) 4.8 N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 1000 VTO-220 (IXTP)VDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 20 VVGSM Transient 30 V(TAB)

9.9. Size:142K ixys
ixta3n150hv.pdf

Preliminary Technical InformationHigh Voltage VDSS = 1500VIXTA3N150HVID25 = 3APower MOSFET RDS(on) 7.3 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-263Symbol Test Conditions Maximum RatingsGSVDSS TJ = 25C to 150C 1500 VVDGR TJ = 25C to 150C, RGS = 1M 1500 V D (Tab)VGSS Continuous 30 VVGSM Transi

9.10. Size:175K ixys
ixta3n120 ixtp3n120 ixth3n120.pdf

High Voltage VDSS = 1200VIXTA3N120Power MOSFET ID25 = 3AIXTP3N120 RDS(on) 4.5 IXTH3N120N-Channel Enhancement ModeTO-263 AA (IXTA)Avalanche RatedFast Intrinsic DiodeGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C, RGS = 1M 1200 VVGSS Continuous

9.11. Size:228K ixys
ixta3n60p ixtp3n60p ixty3n60p.pdf

IXTA 3N60PVDSS = 600 VPolarHVTMIXTP 3N60PID25 = 3.0 APower MOSFETIXTY 3N60P RDS(on) 2.9 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGS Continuous 30 VGSVGSM Transient 40 V(TAB)ID25 T

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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