IXTA36P15P Todos los transistores

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IXTA36P15P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTA36P15P

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 300 W

Tensión drenaje-fuente (Vds): 150 V

Tensión compuerta-fuente (Vgs): 20 V

Tensión umbral compuerta-fuente Vgs(th): 4.5 V

Corriente continua de drenaje (Id): 36 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 228 nS

Resistencia drenaje-fuente RDS(on): 0.11 Ohm

Empaquetado / Estuche: TO263

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IXTA36P15P Datasheet (PDF)

4.1. ixta36n30p ixtp36n30p ixtq36n30p.pdf Size:252K _ixys

IXTA36P15P
IXTA36P15P

IXTA 36N30P VDSS = 300 V PolarHTTM IXTP 36N30P ID25 = 36 A Power MOSFET ? ? IXTQ 36N30P RDS(on) ? 110 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 300 V G VDGR TJ = 25 C to 150 C; RGS = 1 M? 300 V S D(TAB) VGS Continuous 30 V VGSM Transient 40 V TO-220 (IXTP) ID25 TC = 25 C36 A ID

5.1. ixta3n50p ixtp3n50p ixty3n50p.pdf Size:237K _ixys

IXTA36P15P
IXTA36P15P

IXTA 3N50P VDSS = 500 V PolarHVTM IXTP 3N50P ID25 = 3.6 A Power MOSFET ? ? IXTY 3N50P RDS(on) ? 2.0 ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V VGSS 30 V VGSM 40 V (TAB) G D S ID25 TC = 25 C 3.6 A IDM TC = 25 C, pulse width limited

5.2. ixta3n50d2-ixtp3n50d2.pdf Size:168K _ixys

IXTA36P15P
IXTA36P15P

Depletion Mode VDSX = 500V IXTA3N50D2 MOSFET ID(on) > 3A IXTP3N50D2 ? ? RDS(on) ? 1.5? ? ? ? ? ? ? N-Channel TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings S VDSX TJ = 25C to 150C 500 V D (Tab) VGSX Continuous 20 V VGSM Transient 30 V TO-220AB (IXTP) PD TC = 25C 125 W TJ - 55 ... +150 C TJM 150 C Tstg - 55 ... +150 C G D D (Tab) S TL 1.6mm (0.062 in.)

5.3. ixta3n120 ixtp3n120.pdf Size:562K _ixys

IXTA36P15P
IXTA36P15P

VDSS ID25 RDS(on) High Voltage IXTA 3N120 ? ? ? ? Power MOSFETs 1200 V 3 A 4.5 ? IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C; RGS = 1 M? 1200 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25C3 A IDM TC = 25C, pulse width limi

5.4. ixta3n60p ixtp3n60p ixty3n60p.pdf Size:228K _ixys

IXTA36P15P
IXTA36P15P

IXTA 3N60P VDSS = 600 V PolarHVTM IXTP 3N60P ID25 = 3.0 A Power MOSFET IXTY 3N60P ? ? RDS(on) ? 2.9 ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V VGS Continuous 30 V G S VGSM Transient 40 V (TAB) ID25 TC = 25 C 3.0 A TO-220 (IXTP)

Otros transistores... IXTA2N80P , IXTA2R4N120P , IXTA300N04T2 , IXTA300N04T2-7 , IXTA32N20T , IXTA32P05T , IXTA32P20T , IXTA36N30P , IRF3710 , IXTA3N100D2 , IXTA3N100P , IXTA3N110 , IXTA3N120 , IXTA3N50D2 , IXTA3N50P , IXTA3N60P , IXTA42N15T .

 


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