IXTA3N100D2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IXTA3N100D2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Qgⓘ - Carga de la puerta: 37.5 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm
   Paquete / Cubierta: TO263

Búsqueda de reemplazo de MOSFET IXTA3N100D2

IXTA3N100D2 Datasheet (PDF)

0.1. Size:184K ixys
ixta3n100d2hv.pdf

Preliminary Technical InformationHigh Voltage VDSX = 1000VIXTA3N100D2HVDepletion Mode ID(on) > 3AMOSFET RDS(on) 6 DN-ChannelGTO-263HVSGSD (Tab)Symbol Test Conditions Maximum RatingsVDSX TJ = 25C to 150C 1000 VG = Gate D = DrainVGSX Continuous 20 VS = Source Tab = DrainVGSM Transient 30 VPD TC = 25C 1

5.1. Size:150K ixys
ixta3n100p ixth3n100p ixtp3n100p.pdf

IXTA3N100P VDSS = 1000VPolar VHVTMIXTH3N100P ID25 = 3APower MOSFET IXTP3N100P RDS(on) 4.8 N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 1000 VTO-220 (IXTP)VDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 20 VVGSM Transient 30 V(TAB)

7.1. Size:562K ixys
ixta3n120 ixtp3n120.pdf

VDSS ID25 RDS(on)High VoltageIXTA 3N120Power MOSFETs 1200 V 3 A 4.5 IXTP 3N120N-Channel Enhancement ModeAvalanche Rated, High dv/dtSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 V DSID25 TC = 25C3 AIDM TC =

7.2. Size:560K ixys
ixta3n120trl.pdf

7.3. Size:138K ixys
ixta3n120hv.pdf

High Voltage VDSS = 1200VIXTA3N120HVID25 = 3APower MOSFET RDS(on) 4.5 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-263Symbol Test Conditions Maximum RatingsGSVDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C, RGS = 1M 1200 V D (Tab)VGSS Continuous 20 VVGSM Transient 30 VG = Gate D

7.4. Size:142K ixys
ixta3n150hv.pdf

Preliminary Technical InformationHigh Voltage VDSS = 1500VIXTA3N150HVID25 = 3APower MOSFET RDS(on) 7.3 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-263Symbol Test Conditions Maximum RatingsGSVDSS TJ = 25C to 150C 1500 VVDGR TJ = 25C to 150C, RGS = 1M 1500 V D (Tab)VGSS Continuous 30 VVGSM Transi

7.5. Size:175K ixys
ixta3n120 ixtp3n120 ixth3n120.pdf

High Voltage VDSS = 1200VIXTA3N120Power MOSFET ID25 = 3AIXTP3N120 RDS(on) 4.5 IXTH3N120N-Channel Enhancement ModeTO-263 AA (IXTA)Avalanche RatedFast Intrinsic DiodeGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C, RGS = 1M 1200 VVGSS Continuous

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: