IXTA3N110 Todos los transistores

 

IXTA3N110 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTA3N110
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 700 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
   Paquete / Cubierta: TO263
 
   - Selección ⓘ de transistores por parámetros

 

IXTA3N110 Datasheet (PDF)

 7.1. Size:562K  ixys
 ixta3n120 ixtp3n120.pdf pdf_icon

IXTA3N110

VDSS ID25 RDS(on)High VoltageIXTA 3N120Power MOSFETs 1200 V 3 A 4.5 IXTP 3N120N-Channel Enhancement ModeAvalanche Rated, High dv/dtSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 V DSID25 TC = 25C3 AIDM TC =

 7.2. Size:560K  ixys
 ixta3n120trl.pdf pdf_icon

IXTA3N110

VDSS ID25 RDS(on)High VoltageIXTA 3N120Power MOSFETs 1200 V 3 A 4.5 IXTP 3N120N-Channel Enhancement ModeAvalanche Rated, High dv/dtSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 V DSID25 TC = 25C3 AIDM TC =

 7.3. Size:184K  ixys
 ixta3n100d2hv.pdf pdf_icon

IXTA3N110

Preliminary Technical InformationHigh Voltage VDSX = 1000VIXTA3N100D2HVDepletion Mode ID(on) > 3AMOSFET RDS(on) 6 DN-ChannelGTO-263HVSGSD (Tab)Symbol Test Conditions Maximum RatingsVDSX TJ = 25C to 150C 1000 VG = Gate D = DrainVGSX Continuous 20 VS = Source Tab = DrainVGSM Transient 30 VPD TC = 25C 1

 7.4. Size:138K  ixys
 ixta3n120hv.pdf pdf_icon

IXTA3N110

High Voltage VDSS = 1200VIXTA3N120HVID25 = 3APower MOSFET RDS(on) 4.5 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-263Symbol Test Conditions Maximum RatingsGSVDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C, RGS = 1M 1200 V D (Tab)VGSS Continuous 20 VVGSM Transient 30 VG = Gate D

MOSTRAR MÁS

Otros transistores... IXTA300N04T2-7 , IXTA32N20T , IXTA32P05T , IXTA32P20T , IXTA36N30P , IXTA36P15P , IXTA3N100D2 , IXTA3N100P , P55NF06 , IXTA3N120 , IXTA3N50D2 , IXTA3N50P , IXTA3N60P , IXTA42N15T , IXTA42N25P , IXTA44P15T , IXTA460P2 .

History: SML1002R4AN

 

 
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