IXTA3N120 Todos los transistores

 

IXTA3N120 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTA3N120
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 700 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.5 Ohm
   Paquete / Cubierta: TO263
 

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IXTA3N120 Datasheet (PDF)

 ..1. Size:562K  ixys
 ixta3n120 ixtp3n120.pdf pdf_icon

IXTA3N120

VDSS ID25 RDS(on)High VoltageIXTA 3N120Power MOSFETs 1200 V 3 A 4.5 IXTP 3N120N-Channel Enhancement ModeAvalanche Rated, High dv/dtSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 V DSID25 TC = 25C3 AIDM TC =

 ..2. Size:175K  ixys
 ixta3n120 ixtp3n120 ixth3n120.pdf pdf_icon

IXTA3N120

High Voltage VDSS = 1200VIXTA3N120Power MOSFET ID25 = 3AIXTP3N120 RDS(on) 4.5 IXTH3N120N-Channel Enhancement ModeTO-263 AA (IXTA)Avalanche RatedFast Intrinsic DiodeGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C, RGS = 1M 1200 VVGSS Continuous

 0.1. Size:560K  ixys
 ixta3n120trl.pdf pdf_icon

IXTA3N120

VDSS ID25 RDS(on)High VoltageIXTA 3N120Power MOSFETs 1200 V 3 A 4.5 IXTP 3N120N-Channel Enhancement ModeAvalanche Rated, High dv/dtSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 V DSID25 TC = 25C3 AIDM TC =

 0.2. Size:138K  ixys
 ixta3n120hv.pdf pdf_icon

IXTA3N120

High Voltage VDSS = 1200VIXTA3N120HVID25 = 3APower MOSFET RDS(on) 4.5 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-263Symbol Test Conditions Maximum RatingsGSVDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C, RGS = 1M 1200 V D (Tab)VGSS Continuous 20 VVGSM Transient 30 VG = Gate D

MOSTRAR MÁS

Otros transistores... IXTA32N20T , IXTA32P05T , IXTA32P20T , IXTA36N30P , IXTA36P15P , IXTA3N100D2 , IXTA3N100P , IXTA3N110 , IRFB4227 , IXTA3N50D2 , IXTA3N50P , IXTA3N60P , IXTA42N15T , IXTA42N25P , IXTA44P15T , IXTA460P2 , IXTA48N20T .

History: PK650DY | PPMT20V4E | ZXM64P02X | 2SK3043 | HM50P03D | 2SK3608-01S | 10N65KG-T2Q-T

 

 
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