3SK131 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 3SK131
Código: V11_V12_V13
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.2 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 8 V
Corriente continua de drenaje |Id|: 0.025 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Voltaje de corte de la puerta |Vgs(off)|: 1.5 V
Conductancia de drenaje-sustrato (Cd): 2.9 pF
Resistencia entre drenaje y fuente RDS(on): 45 Ohm
Paquete / Cubierta: SOT143
Búsqueda de reemplazo de MOSFET 3SK131
3SK131 Datasheet (PDF)
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DATA SHEETMOS FIELD EFFECT TRANSISTOR3SK135ARF AMP. FOR UHF TV TUNERN-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR4PIN MINI MOLDPACKAGE DIMENSIONSFEATURESin millimeters Suitable for use as RF amplifier in UHF TV tuner.+0.2 Low Crss : 0.02 pF TYP.2.80.3 +0.2 High Gps : 18 dB TYP. 1.50.1 Low NF : 2.7 dB TYP.+0.1 ABSOLUTE MAXIMUM RATI
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Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Mainten
3sk134b.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR3SK134BRF AMP. FOR UHF TV TUNERN-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR4 PINS MINI MOLDFEATURESPACKAGE DIMENSIONS High Power Gain : Gps = 23.0 dB TYP. (@ = 900 MHz) (Unit : mm) Low Noise Figure : NF = 2.4 dB TYP. (@ = 900 MHz)2.8+0.2 0.3 Suitable for use as RF amplifier in UHF TV tuner.1.5+0.2 0.1
Otros transistores... 3SK123AK , 3SK123AL , 3SK125P , 3SK125Q , 3SK128P , 3SK128Q , 3SK128R , 3SK129 , 5N50 , 3SK132 , 3SK132A , 3SK133 , 3SK133A , 3SK134B , 3SK135A , 3SK136 , 3SK137 .
