IXTA60N10T Datasheet. Equivalente

 ..1. Size:288K  ixys
 ixta60n10t ixtp60n10t.pdf

TrenchTM VDSS = 100V IXTA60N10T ID25 = 60A Power MOSFET IXTP60N10T RDS(on) 18m N-Channel Enhancement Mode TO-263 Avalanche Rated (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 VDSS TJ = 25 C to 175 C 100 V (IXTP) VDGR TJ = 25 C to 175 C, RGS = 1M 100 V VGSS Continuous 20 V VGSM Transient 30 V G

 ..2. Size:203K  inchange semiconductor
 ixta60n10t.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IXTA60N10T FEATURES With TO-263(D2PAK) packaging Low gate charge High speed switching Low on-resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

 7.1. Size:135K  ixys
 ixta60n20t ixtp60n20t ixtq60n20t.pdf

TrenchTM VDSS = 200V IXTA60N20T Power MOSFET ID25 = 60A IXTP60N20T RDS(on) 40m IXTQ60N20T TO-263 AA (IXTA) N-Channel Enhancement Mode For PDP Drivers G Avalanche Rated S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 200 V VDGR TJ = 25 C to 175 C, RGS = 1M 200 V G VGSS Continuous 20 V D D (

 9.1. Size:252K  ixys
 ixta62n15p ixtp62n15p ixtq62n15p.pdf

IXTA 62N15P VDSS = 150 V PolarHTTM IXTP 62N15P ID25 = 62 A Power MOSFET IXTQ 62N15P RDS(on) 40 m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 150 V G S VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V (TAB) VGS Continuous 20 V VGSM Transient 30 V TO-220 (I

 9.2. Size:206K  ixys
 ixta6n50d2 ixtp6n50d2 ixth6n50d2.pdf

Preliminary Technical Information Depletion Mode VDSX = 500V IXTA6N50D2 MOSFET ID(on) > 6A IXTP6N50D2 RDS(on) 500m IXTH6N50D2 N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSX TJ = 25 C to 150 C 500 V VGSX Continuous 20 V VGSM Transient 30 V PD TC = 25 C 300 W G D D (Tab) TJ - 55 .

 9.3. Size:167K  ixys
 ixta64n10l2 ixth64n10l2 ixtp64n10l2.pdf

Advance Technical Information LinearL2TM Power VDSS = 100V IXTA64N10L2 MOSFETs w/Extended ID25 = 64A IXTP64N10L2 RDS(on) 32m FBSOA IXTH64N10L2 N-Channel Enhancement Mode TO-263AA (IXTA) Guaranteed FBSOA Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C

 9.4. Size:229K  ixys
 ixta6n50p ixtp6n50p.pdf

VDSS = 500 V IXTA 6N50P PolarHVTM ID25 = 6 A IXTP 6N50P Power MOSFET RDS(on) 1.1 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGSS Continuous 30 V G S VGSM Transient 40 V (TAB) ID25 TC = 25 C6 A

 9.5. Size:184K  ixys
 ixta6n100d2-ixtp6n100d2-ixth6n100d2.pdf

Preliminary Technical Information Depletion Mode VDSX = 1000V IXTA6N100D2 MOSFET ID(on) > 6A IXTP6N100D2 RDS(on) 2.2 IXTH6N100D2 N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSX TJ = 25 C to 150 C 1000 V VGSX Continuous 20 V VGSM Transient 30 V PD TC = 25 C 300 W G D D (Tab) TJ -