IXTA60N20T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IXTA60N20T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 500 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 73 nC
   trⓘ - Tiempo de subida: 118 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: TO263

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IXTA60N20T Datasheet (PDF)

..1. Size:135K ixys
ixta60n20t ixtp60n20t ixtq60n20t.pdf

TrenchTM VDSS = 200VIXTA60N20TPower MOSFET ID25 = 60AIXTP60N20T RDS(on) 40m IXTQ60N20TTO-263 AA (IXTA)N-Channel Enhancement ModeFor PDP DriversGAvalanche RatedSD (Tab)TO-220AB (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 200 VVDGR TJ = 25C to 175C, RGS = 1M 200 VGVGSS Continuous 20 VDD (

7.1. Size:288K ixys
ixta60n10t ixtp60n10t.pdf

TrenchTM VDSS = 100VIXTA60N10TID25 = 60APower MOSFETIXTP60N10T RDS(on) 18m N-Channel Enhancement ModeTO-263Avalanche Rated(IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220VDSS TJ = 25C to 175C 100 V(IXTP)VDGR TJ = 25C to 175C, RGS = 1M 100 VVGSS Continuous 20 VVGSM Transient 30 VG

7.2. Size:203K inchange semiconductor
ixta60n10t.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IXTA60N10TFEATURESWith TO-263(D2PAK) packagingLow gate chargeHigh speed switchingLow on-resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

9.1. Size:252K ixys
ixta62n15p ixtp62n15p ixtq62n15p.pdf

IXTA 62N15P VDSS = 150 VPolarHTTMIXTP 62N15P ID25 = 62 APower MOSFETIXTQ 62N15P RDS(on) 40 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 175 C 150 VGSVDGR TJ = 25 C to 175 C; RGS = 1 M 150 V(TAB)VGS Continuous 20 VVGSM Transient 30 VTO-220 (I

9.2. Size:206K ixys
ixta6n50d2 ixtp6n50d2 ixth6n50d2.pdf

Preliminary Technical InformationDepletion Mode VDSX = 500VIXTA6N50D2MOSFET ID(on) > 6AIXTP6N50D2 RDS(on) 500m IXTH6N50D2N-ChannelTO-263 AA (IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSX TJ = 25C to 150C 500 VVGSX Continuous 20 VVGSM Transient 30 VPD TC = 25C 300 WGDD (Tab)TJ - 55 .

9.3. Size:167K ixys
ixta64n10l2 ixth64n10l2 ixtp64n10l2.pdf

Advance Technical InformationLinearL2TM Power VDSS = 100VIXTA64N10L2MOSFETs w/Extended ID25 = 64AIXTP64N10L2 RDS(on) 32m FBSOAIXTH64N10L2N-Channel Enhancement ModeTO-263AA (IXTA)Guaranteed FBSOAAvalanche RatedGSD (Tab)TO-220AB (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 100 VVDGR TJ = 25C

9.4. Size:229K ixys
ixta6n50p ixtp6n50p.pdf

VDSS = 500 VIXTA 6N50PPolarHVTMID25 = 6 AIXTP 6N50PPower MOSFET RDS(on) 1.1 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGSS Continuous 30 VGSVGSM Transient 40 V(TAB)ID25 TC = 25 C6 A

9.5. Size:184K ixys
ixta6n100d2-ixtp6n100d2-ixth6n100d2.pdf

Preliminary Technical InformationDepletion Mode VDSX = 1000VIXTA6N100D2MOSFET ID(on) > 6AIXTP6N100D2 RDS(on) 2.2 IXTH6N100D2N-ChannelTO-263 AA (IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSX TJ = 25C to 150C 1000 VVGSX Continuous 20 VVGSM Transient 30 VPD TC = 25C 300 WGDD (Tab)TJ -

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