3SK132 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 3SK132
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 0.025 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 55 Ohm
Paquete / Cubierta: SOT143

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3SK132 Datasheet (PDF)

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DATA SHEETMOS FIELD EFFECT TRANSISTOR3SK135ARF AMP. FOR UHF TV TUNERN-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR4PIN MINI MOLDPACKAGE DIMENSIONSFEATURESin millimeters Suitable for use as RF amplifier in UHF TV tuner.+0.2 Low Crss : 0.02 pF TYP.2.80.3 +0.2 High Gps : 18 dB TYP. 1.50.1 Low NF : 2.7 dB TYP.+0.1 ABSOLUTE MAXIMUM RATI

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Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Mainten

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DATA SHEETMOS FIELD EFFECT TRANSISTOR3SK134BRF AMP. FOR UHF TV TUNERN-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR4 PINS MINI MOLDFEATURESPACKAGE DIMENSIONS High Power Gain : Gps = 23.0 dB TYP. (@ = 900 MHz) (Unit : mm) Low Noise Figure : NF = 2.4 dB TYP. (@ = 900 MHz)2.8+0.2 0.3 Suitable for use as RF amplifier in UHF TV tuner.1.5+0.2 0.1

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