IXTA70N075T2 Todos los transistores

 

IXTA70N075T2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTA70N075T2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 70 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 48 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: TO263
     - Selección de transistores por parámetros

 

IXTA70N075T2 Datasheet (PDF)

 6.1. Size:175K  ixys
 ixta70n085t ixtp70n085t.pdf pdf_icon

IXTA70N075T2

Preliminary Technical InformationIXTA70N085T VDSS = 85 VTrenchMVTMIXTP70N085T ID25 = 70 APower MOSFET RDS(on) 13.5 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25C to 175C85 VVDGR TJ = 25C to 175C; RGS = 1 M 85 VGVGSM Transient 20 VS(TAB)ID25 TC = 25C70 A

 9.1. Size:252K  ixys
 ixta75n10p ixtp75n10p ixtq75n10p.pdf pdf_icon

IXTA70N075T2

IXTA 75N10P VDSS = 100 VPolarHTTMIXTP 75N10P ID25 = 75 APower MOSFETIXTQ 75N10P RDS(on) 25 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsGSVDSS TJ = 25 C to 175 C 100 V(TAB)VDGR TJ = 25 C to 175 C; RGS = 1 M 100 VVGS Continuous 20 VTO-220 (IXTP)VGSM Transient

 9.2. Size:177K  ixys
 ixta76n075t ixtp76n075t.pdf pdf_icon

IXTA70N075T2

Preliminary Technical InformationIXTA76N075T VDSS = 75 VTrenchMVTMIXTP76N075T ID25 = 76 APower MOSFET RDS(on) 12 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VGVGSM Transient 20 VS(TAB)ID25 TC = 25C76 A

 9.3. Size:182K  ixys
 ixta7n60p ixtp7n60p.pdf pdf_icon

IXTA70N075T2

VDSS = 600 VIXTA 7N60PPolarHVTMID25 = 7 AIXTP 7N60PPower MOSFET RDS(on) 1.1 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25 C to 175 C 600 VVDGR TJ = 25 C to 175 C; RGS = 1 M 600 VVGS Continuous 30 V(TAB)GVGSM Transient 40 VDSID25 TC = 25 C7 A

MOSTRAR MÁS

Otros transistores... IXTA5N50P , IXTA5N60P , IXTA60N10T , IXTA60N20T , IXTA62N15P , IXTA6N100D2 , IXTA6N50D2 , IXTA6N50P , 5N60 , IXTA70N085T , IXTA75N10P , IXTA76N075T , IXTA76N25T , IXTA76P10T , IXTA7N60P , IXTA80N10T , IXTA80N10T7 .

History: IXTP50N28T | 3SK249

 

 
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