IXTA80N10T Todos los transistores

 

IXTA80N10T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTA80N10T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 230 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 100 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: TO263
 

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IXTA80N10T Datasheet (PDF)

 ..1. Size:184K  ixys
 ixta80n10t ixtp80n10t.pdf pdf_icon

IXTA80N10T

TrenchMVTM VDSS = 100VIXTA80N10TPower MOSFET ID25 = 80AIXTP80N10T RDS(on) 14m N-Channel Enhancement ModeTO-263 AA (IXTA)Avalanche RatedFast Intrinsic DiodeGSSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175C, RGS = 1M 100 VTO-220AB (IXTP)VGSS Continuous 20 VVGSM Transien

 0.1. Size:163K  ixys
 ixta80n10t7.pdf pdf_icon

IXTA80N10T

Preliminary Technical InformationVDSS = 100 VIXTA80N10T7TrenchMVTMID25 = 80 APower MOSFET RDS(on) 14 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175C; RGS = 1 M 100 VVGSM Transient 30 V1ID25 TC = 25C80 A 7I

 7.1. Size:168K  ixys
 ixta80n075l2 ixth80n075l2 ixtp80n075l2.pdf pdf_icon

IXTA80N10T

Advance Technical InformationLinearL2TM Power VDSS = 75VIXTA80N075L2MOSFETs w/Extended ID25 = 80AIXTP80N075L2 RDS(on) 24m FBSOAIXTH80N075L2N-Channel Enhancement ModeTO-263AA (IXTA)Guaranteed FBSOAAvalanche RatedGSD (Tab)TO-220AB (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 75 VVDGR TJ = 25

 7.2. Size:252K  inchange semiconductor
 ixta80n075l2.pdf pdf_icon

IXTA80N10T

isc N-Channel MOSFET Transistor IXTA80N075L2FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

MOSTRAR MÁS

Otros transistores... IXTA6N50P , IXTA70N075T2 , IXTA70N085T , IXTA75N10P , IXTA76N075T , IXTA76N25T , IXTA76P10T , IXTA7N60P , IRLB4132 , IXTA80N10T7 , IXTA80N12T2 , IXTA86N20T , IXTA88N085T , IXTA88N085T7 , IXTA8N50P , IXTA90N055T , IXTA90N055T2 .

 

 
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