IXTA80N12T2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTA80N12T2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 325 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 90 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm

Encapsulados: TO263

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IXTA80N12T2 datasheet

 6.1. Size:184K  ixys
 ixta80n10t ixtp80n10t.pdf pdf_icon

IXTA80N12T2

TrenchMVTM VDSS = 100V IXTA80N10T Power MOSFET ID25 = 80A IXTP80N10T RDS(on) 14m N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated Fast Intrinsic Diode G S Symbol Test Conditions Maximum Ratings D (Tab) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C, RGS = 1M 100 V TO-220AB (IXTP) VGSS Continuous 20 V VGSM Transien

 6.2. Size:163K  ixys
 ixta80n10t7.pdf pdf_icon

IXTA80N12T2

Preliminary Technical Information VDSS = 100 V IXTA80N10T7 TrenchMVTM ID25 = 80 A Power MOSFET RDS(on) 14 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (7-lead) (IXTA..7) VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGSM Transient 30 V 1 ID25 TC = 25 C80 A 7 I

 7.1. Size:168K  ixys
 ixta80n075l2 ixth80n075l2 ixtp80n075l2.pdf pdf_icon

IXTA80N12T2

Advance Technical Information LinearL2TM Power VDSS = 75V IXTA80N075L2 MOSFETs w/Extended ID25 = 80A IXTP80N075L2 RDS(on) 24m FBSOA IXTH80N075L2 N-Channel Enhancement Mode TO-263AA (IXTA) Guaranteed FBSOA Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 75 V VDGR TJ = 25

 7.2. Size:252K  inchange semiconductor
 ixta80n075l2.pdf pdf_icon

IXTA80N12T2

isc N-Channel MOSFET Transistor IXTA80N075L2 FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )

MOSTRAR MÁS

Otros transistores... IXTA70N085T, IXTA75N10P, IXTA76N075T, IXTA76N25T, IXTA76P10T, IXTA7N60P, IXTA80N10T, IXTA80N10T7, AON7506, IXTA86N20T, IXTA88N085T, IXTA88N085T7, IXTA8N50P, IXTA90N055T, IXTA90N055T2, IXTA90N075T2, IXTA90N15T