IXTA88N085T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IXTA88N085T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 230 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 88 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 69 nC
   trⓘ - Tiempo de subida: 90 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
   Paquete / Cubierta: TO263

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IXTA88N085T Datasheet (PDF)

..1. Size:217K ixys
ixta88n085t ixtp88n085t.pdf

Preliminary Technical InformationIXTA88N085T VDSS = 85 VTrenchMVTMIXTP88N085T ID25 = 88 APower MOSFET RDS(on) 11 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VGVGSM Transient 20 VS(TAB)ID25 TC =

0.1. Size:165K ixys
ixta88n085t7.pdf

Preliminary Technical InformationVDSS = 85 VIXTA88N085T7TrenchMVTMID25 = 88 APower MOSFET RDS(on) 11 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25C to 175C85 VVDGR TJ = 25C to 175C; RGS = 1 M 85 VVGSM Transient 20 V1ID25 TC = 25C88 A 7IDM

9.1. Size:238K ixys
ixta8n65x2 ixtp8n65x2 ixty8n65x2.pdf

Preliminary Technical InformationX2-Class VDSS = 650VIXTY8N65X2Power MOSFET ID25 = 8AIXTA8N65X2 RDS(on) 500m IXTP8N65X2N-Channel Enhancement ModeTO-252 (IXTY)G SSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 650 VTO-263 (IXTA)VDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VG

9.2. Size:184K ixys
ixta80n10t ixtp80n10t.pdf

TrenchMVTM VDSS = 100VIXTA80N10TPower MOSFET ID25 = 80AIXTP80N10T RDS(on) 14m N-Channel Enhancement ModeTO-263 AA (IXTA)Avalanche RatedFast Intrinsic DiodeGSSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175C, RGS = 1M 100 VTO-220AB (IXTP)VGSS Continuous 20 VVGSM Transien

9.3. Size:163K ixys
ixta80n10t7.pdf

Preliminary Technical InformationVDSS = 100 VIXTA80N10T7TrenchMVTMID25 = 80 APower MOSFET RDS(on) 14 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (7-lead) (IXTA..7)VDSS TJ = 25C to 175C 100 VVDGR TJ = 25C to 175C; RGS = 1 M 100 VVGSM Transient 30 V1ID25 TC = 25C80 A 7I

9.4. Size:229K ixys
ixta8n50p ixtp8n50p.pdf

IXTA 8N50P VDSS = 500 VPolarHVTMIXTP 8N50P ID25 = 8 APower MOSFET RDS(on) 0.8 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VGVGS Continuous 30 VSVGSM Transient 40 V(TAB)ID25 TC = 25 C8 AIDM

9.5. Size:168K ixys
ixta80n075l2 ixth80n075l2 ixtp80n075l2.pdf

Advance Technical InformationLinearL2TM Power VDSS = 75VIXTA80N075L2MOSFETs w/Extended ID25 = 80AIXTP80N075L2 RDS(on) 24m FBSOAIXTH80N075L2N-Channel Enhancement ModeTO-263AA (IXTA)Guaranteed FBSOAAvalanche RatedGSD (Tab)TO-220AB (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 75 VVDGR TJ = 25

9.6. Size:252K inchange semiconductor
ixta80n075l2.pdf

isc N-Channel MOSFET Transistor IXTA80N075L2FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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