IXTC220N075T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IXTC220N075T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 115 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 50 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: ISOPLUS220

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IXTC220N075T Datasheet (PDF)

..1. Size:186K ixys
ixtc220n075t.pdf

Preliminary Technical InformationIXTC220N075T VDSS = 75 VTrenchMVTMID25 = 115 APower MOSFET RDS(on) 5.0 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS220 (IXTC)E153432VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VVGSM Transient

5.1. Size:187K ixys
ixtc220n055t.pdf

Preliminary Technical InformationIXTC220N055T VDSS = 55 VTrenchMVTMID25 = 130 APower MOSFET RDS(on) 4.4 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS220 (IXTC)E153432VDSS TJ = 25C to 175C55 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VVGSM Transient

9.1. Size:175K ixys
ixtc26n50p.pdf

IXTC 26N50P VDSS = 500 VPolarHVTMID25 = 15 APower MOSFET RDS(on) 260 m ISOPLUS220TM(Electrically Isolated Tab)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 V ISOPLUS220TM (IXTC)E153432VDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGS Continuous 30 VVGSM Transi

9.2. Size:186K ixys
ixtc280n055t.pdf

Preliminary Technical InformationIXTC280N055T VDSS = 55 VTrenchMVTMID25 = 145 APower MOSFET RDS(on) 3.6 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS220 (IXTC)E153432VDSS TJ = 25C to 175C55 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VVGSM Transient

9.3. Size:187K ixys
ixtc240n055t.pdf

Preliminary Technical InformationIXTC240N055T VDSS = 55 VTrenchMVTMID25 = 132 APower MOSFET RDS(on) 4.0 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS240 (IXTC)E153432VDSS TJ = 25C to 175C55 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VVGSM Transient

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