IXTF250N075T Todos los transistores

 

IXTF250N075T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTF250N075T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 140 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 50 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0044 Ohm
   Paquete / Cubierta: ISOPLUS I4PAK
 

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IXTF250N075T Datasheet (PDF)

 ..1. Size:59K  ixys
 ixtf250n075t.pdf pdf_icon

IXTF250N075T

Advance Technical InformationVDSS = 75 VIXTF250N075TTrenchMVTMID25 = 140 APower MOSFET 4.4 RDS(on) 4.4 m 4.4 4.4 4.4 (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedISOPLUS i4-PakTM (5-lead) (IXTF)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 75 VVDGR TJ = 25C to 175C; RGS = 1 M 75

 9.1. Size:57K  ixys
 ixtf230n085t.pdf pdf_icon

IXTF250N075T

Advance Technical InformationVDSS = 85 VIXTF230N085TTrenchMVTMID25 = 130 APower MOSFET RDS(on) 5.3 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeISOPLUS i4-PakTM (5-lead) (IXTF)Avalanche RatedSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 85 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VGVGSM Tran

 9.2. Size:57K  ixys
 ixtf280n055t.pdf pdf_icon

IXTF250N075T

Advance Technical InformationVDSS = 55 VIXTF280N055TTrenchMVTMID25 = 160 APower MOSFET RDS(on) 4.0 m (Electrically Isolated Back Surface)N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsISOPLUS i4-PakTM (5-lead) (IXTF)VDSS TJ = 25C to 175C 55 VVDGR TJ = 25C to 175C; RGS = 1 M 55 VVGSM Transie

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History: IXFK72N20 | STU15N20 | HUF75333S3 | FDD20AN06F085 | IRLR3303 | FDS8690 | NTD4813NH

 

 
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