IXTH12N100L Todos los transistores

 

IXTH12N100L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTH12N100L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 400 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 1000 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.3 Ohm
   Paquete / Cubierta: TO247
 

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IXTH12N100L Datasheet (PDF)

 4.1. Size:105K  ixys
 ixth10n100 ixtm10n100 ixth12n100 ixtm12n100.pdf pdf_icon

IXTH12N100L

VDSS ID25 RDS(on)MegaMOSTMFET IXTH / IXTM 10N100 1000 V 10 A 1.20 IXTH / IXTM 12N100 1000 V 12 A 1.05 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 AD (IXTH)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C 10N

 6.1. Size:175K  ixys
 ixtt12n150 ixth12n150.pdf pdf_icon

IXTH12N100L

High Voltage VDSS = 1500VIXTT12N150ID25 = 12APower MOSFETIXTH12N150 RDS(on) 2.2 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 30 VTO-247 (IXTH)VG

 6.2. Size:122K  ixys
 ixth12n150 ixtt12n150.pdf pdf_icon

IXTH12N100L

High Voltage VDSS = 1500VIXTT12N150ID25 = 12APower MOSFETsIXTH12N150 RDS(on) 2 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-268 (IXTT)GSymbol Test Conditions Maximum RatingsSVDSS TJ = 25C to 150C 1500 VD (Tab)VDGR TJ = 25C to 150C, RGS = 1M 1500 VVGSS Continuous 30 VTO-247 (IXTH)VGSM Transient

 6.3. Size:545K  ixys
 ixth12n120.pdf pdf_icon

IXTH12N100L

VDSS = 1200 VIXTH 12N120ID (cont) = 12 APower MOSFET, Avalanche Rated RDS(on)= 1.4 High VoltagePreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247 ADVDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VVGS Continuous 30 VD (TAB)VGSM Transient 40 VID25 TC = 25C12 AIDM TC = 25C, pulse width limit

MOSTRAR MÁS

Otros transistores... IXTH102N20T , IXTH10N100D , IXTH10N100D2 , IXTH10P50P , IXTH10P60 , IXTH110N10L2 , IXTH110N25T , IXTH120P065T , 50N06 , IXTH12N100Q , IXTH12N120 , IXTH12N140 , IXTH130N10T , IXTH130N15T , IXTH130N20T , IXTH140P05T , IXTH150N17T .

 

 
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