IXTH160N10T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTH160N10T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 430 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 160 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 100 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: TO247

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IXTH160N10T datasheet

 ..1. Size:186K  ixys
 ixth160n10t ixtq160n10t.pdf pdf_icon

IXTH160N10T

Preliminary Technical Information IXTH160N10T VDSS = 100 V TrenchMVTM IXTQ160N10T ID25 = 160 A Power MOSFET RDS(on) 7.0 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D S VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGSM Transient 30 V TO-3P (IXTQ)

 5.1. Size:124K  ixys
 ixth160n15t.pdf pdf_icon

IXTH160N10T

Preliminary Technical Information IXTH160N15T VDSS = 150 V TrenchHVTM ID25 = 160 A Power MOSFET RDS(on) 9.6 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1M 150 V VGSM Transient 30 V ID25 TC = 25 C 160 A G (TAB) ILRMS Lead Curr

 6.1. Size:184K  ixys
 ixth160n075t ixtq160n075t.pdf pdf_icon

IXTH160N10T

Preliminary Technical Information IXTH160N075T VDSS = 75 V TrenchMVTM IXTQ160N075T ID25 = 160 A Power MOSFET RDS(on) 6.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 175 C 75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V VGSM Transient 20 V ID25 TC = 25 C 160 A D (TAB

 8.1. Size:43K  ixys
 ixth16p20.pdf pdf_icon

IXTH160N10T

IXTH 16P20 VDSS = -200 V Standard Power MOSFET ID25 = -16 A P-Channel Enhancement Mode RDS(on) = 0.16 Avalanche Rated Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C -200 V VDGR TJ = 25 C to 150 C; RGS = 1 M -200 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C -16 A IDM TC = 25

MOSTRAR MÁS

Otros transistores... IXTH130N10T, IXTH130N15T, IXTH130N20T, IXTH140P05T, IXTH150N17T, IXTH152N085T, IXTH15N50L2, IXTH160N075T, 10N60, IXTH160N15T, IXTH16N10D2, IXTH16N20D2, IXTH16N50D2, IXTH16P20, IXTH16P60P, IXTH180N085T, IXTH180N10T