IXTH16N20D2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTH16N20D2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 695 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Qgⓘ - Carga de la puerta: 208 nC

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.073 Ohm

Encapsulados: TO247

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IXTH16N20D2 datasheet

 7.1. Size:199K  ixys
 ixth16n50d2 ixtt16n50d2.pdf pdf_icon

IXTH16N20D2

Advance Technical Information Depletion Mode VDSX = 500V IXTH16N50D2 MOSFET ID(on) > 16A IXTT16N50D2 RDS(on) 240m N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSX TJ = 25 C to 150 C 500 V VDGX TJ = 25 C to 150 C, RGS = 1M 500 V VGSX Continuous 20 V TO-268 (IXTT) VGSM Transient 30 V PD TC = 2

 7.2. Size:172K  ixys
 ixth16n10d2 ixtt16n10d2.pdf pdf_icon

IXTH16N20D2

Advance Technical Information Depletion Mode VDSX = 100V IXTH16N10D2 MOSFET ID(on) > 16A IXTT16N10D2 RDS(on) 64m N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSX TJ = 25 C to 150 C 100 V VDGX TJ = 25 C to 150 C, RGS = 1M 100 V VGSX Continuous 20 V VGSM Transient 30 V TO-268 (IXTT) PD TC = 25 C 695

 8.1. Size:43K  ixys
 ixth16p20.pdf pdf_icon

IXTH16N20D2

IXTH 16P20 VDSS = -200 V Standard Power MOSFET ID25 = -16 A P-Channel Enhancement Mode RDS(on) = 0.16 Avalanche Rated Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C -200 V VDGR TJ = 25 C to 150 C; RGS = 1 M -200 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C -16 A IDM TC = 25

 8.2. Size:186K  ixys
 ixth160n10t ixtq160n10t.pdf pdf_icon

IXTH16N20D2

Preliminary Technical Information IXTH160N10T VDSS = 100 V TrenchMVTM IXTQ160N10T ID25 = 160 A Power MOSFET RDS(on) 7.0 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D S VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGSM Transient 30 V TO-3P (IXTQ)

MOSTRAR MÁS

Otros transistores... IXTH140P05T, IXTH150N17T, IXTH152N085T, IXTH15N50L2, IXTH160N075T, IXTH160N10T, IXTH160N15T, IXTH16N10D2, 2N7000, IXTH16N50D2, IXTH16P20, IXTH16P60P, IXTH180N085T, IXTH180N10T, IXTH182N055T, IXTH1N100, IXTH1N250