IXTH26N60P Datasheet. Equivalente

 ..1. Size:230K  ixys
 ixtt26n60p ixtv26n60p ixtv26n60ps ixth26n60p ixtq26n60p.pdf

IXTH26N60P VDSS = 600 V PolarHVTM IXTQ26N60P ID25 = 26 A Power MOSFET IXTT26N60P RDS(on) 270 m N-Channel Enhancement Mode IXTV26N60P Avalanche Rated TO-247 (IXTH) IXTV26N60PS G D S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V TO-3P (IXTQ) VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGSS Continuous 30 V VGSM Tran

 8.1. Size:166K  ixys
 ixth260n055t2.pdf

Preliminary Technical Information VDSS = 55V TrenchT2TM Power IXTH260N055T2 ID25 = 260A MOSFET RDS(on) 3.3m N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C55 V G VDGR TJ = 25 C to 175 C, RGS = 1M 55 V (TAB) D S VGSM Transient 20 V ID25 TC = 25 C 260 A G = Gate D =

 8.2. Size:184K  ixys
 ixta26p20p ixth26p20p ixtp26p20p ixtq26p20p.pdf

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 ixth2n300p3hv ixtt2n300p3hv.pdf

Advance Technical Information High Voltage VDSS = 3000V IXTT2N300P3HV Power MOSFET ID25 = 2A IXTH2N300P3HV RDS(on) 21 TO-268HV (IXTT) N-Channel Enhancement Mode G S D (Tab) TO-247HV (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 3000 V VDGR TJ = 25 C to 150 C, RGS = 1M 3000 V VGSS Continuous 20 V V

 9.2. Size:316K  ixys
 ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf

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 9.3. Size:105K  ixys
 ixth20n60 ixtm20n60.pdf

IXTH 20N60 VDSS = 600 V MegaMOSTMFET IXTM 20N60 ID25 = 20 A RDS(on) = 0.35 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C 15N60 15 A TO-204 AE (IXTM) 20N60 20 A IDM TC = 25 C, p

 9.4. Size:205K  ixys
 ixth230n085t ixtq230n085t.pdf

Preliminary Technical Information IXTH230N085T VDSS = 85 V TrenchMVTM IXTQ230N085T ID25 = 230 A Power MOSFET RDS(on) 4.4 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25 C to 175 C 85 V S VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V TO-3P (

 9.5. Size:204K  ixys
 ixth240n055t ixtq240n055t.pdf

Preliminary Technical Information IXTH240N055T VDSS = 55 V TrenchMVTM IXTQ240N055T ID25 = 240 A Power MOSFET RDS(on) 3.6 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V VGSM Transient 20 V ID25 TC = 25 C 240

 9.6. Size:337K  ixys
 ixtt240n15x4hv ixth240n15x4.pdf

Advance Technical Information X4-Class VDSS = 150V IXTT240N15X4HV Power MOSFETTM ID25 = 240A IXTH240N15X4 RDS(on) 4.4m N-Channel Enhancement Mode Avalanche Rated TO-268HV (IXTT..HV) G Symbol Test Conditions Maximum Ratings S VDSS TJ = 25 C to 175 C 150 V D (Tab) VDGR TJ = 25 C to 175 C, RGS = 1M 150 V TO-247 (IXTH) VGSS Cont

 9.7. Size:231K  ixys
 ixta20n65x ixth20n65x ixtp20n65x.pdf

Preliminary Technical Information X-Class VDSS = 650V IXTA20N65X Power MOSFET ID25 = 20A IXTP20N65X RDS(on) 210m IXTH20N65X N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V VG

 9.8. Size:185K  ixys
 ixth220n075t ixtq220n075t.pdf

Preliminary Technical Information IXTH220N075T VDSS = 75 V TrenchMVTM IXTQ220N075T ID25 = 220 A Power MOSFET RDS(on) 4.5 m N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C75 V G (TAB) D VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V S VGSM Transient 20 V ID25 TC = 25

 9.9. Size:204K  ixys
 ixth250n075t ixtq250n075t.pdf

Preliminary Technical Information IXTH250N075T VDSS = 75 V TrenchMVTM IXTQ250N075T ID25 = 250 A Power MOSFET RDS(on) 4.0 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D S VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V TO-3P (IXTQ) VGSM Transient

 9.10. Size:163K  ixys
 ixta270n04t4 ixth270n04t4 ixtp270n04t4.pdf

Advance Technical Information VDSS = 40V TrenchT4TM IXTA270N04T4 ID25 = 270A Power MOSFET IXTP270N04T4 RDS(on) 2.4m IXTH270N04T4 N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C40 V G D D (Tab) S VDGR TJ = 25 C to 175 C, RG

 9.11. Size:198K  ixys
 ixth22n50p ixtq22n50p ixtv22n50p.pdf

IXTH 22N50P VDSS = 500 V PolarHVTM IXTQ 22N50P ID25 = 22 A Power MOSFET IXTV 22N50P RDS(on) 270 m N-Channel Enhancement Mode IXTV 22N50PS Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25 C to 150 C 500 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 30 V TO-3P (IXTQ) VGSM Trans

 9.12. Size:108K  ixys
 ixth21n50 ixth24n50 ixtm21n50 ixtm24n50.pdf

VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 21N50 500 V 21 A 0.25 IXTH / IXTM 24N50 500 V 24 A 0.23 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 21N50 21 A

 9.13. Size:204K  ixys
 ixth220n055t ixtq220n055t.pdf

Preliminary Technical Information IXTH220N055T VDSS = 55 V TrenchMVTM IXTQ220N055T ID25 = 220 A Power MOSFET RDS(on) 4.0 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25 C to 175 C55 V S VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V VGSM Transient 20 V TO-

 9.14. Size:205K  ixys
 ixth200n085t ixtq200n085t.pdf

Preliminary Technical Information IXTH200N085T VDSS = 85 V TrenchMVTM IXTQ200N085T ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V ID25 TC = 25 C 20

 9.15. Size:172K  ixys
 ixth2n170d2 ixtt2n170d2.pdf

Depletion Mode VDSX = 1700V IXTT2N170D2 MOSFETs ID(on) > 2A IXTH2N170D2 RDS(on) 6.5 N-Channel TO-268 (IXTT) G S D (Tab) TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSX TJ = 25 C to 150 C 1700 V VDGX TJ = 25 C to 150 C, RGS = 1M 1700 V VGSX Continuous 20 V G VGSM Transient 30 V D D (Tab) S PD TC = 25 C 568 W G = Gate

 9.16. Size:184K  ixys
 ixth200n075t ixtq200n075t.pdf

Preliminary Technical Information IXTH200N075T VDSS = 75 V Trench Gate IXTQ200N075T ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V VGSM Transient 20 V ID25 TC = 25 C 200 A ILRMS

 9.17. Size:109K  ixys
 ixth2n150l.pdf

Advance Technical Information LinearTM Power MOSFET VDSS = 1500V IXTH2N150L ID25 = 2A w/Extended FBSOA RDS(on) 15 N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-247 G D (Tab) S Symbol Test Conditions Maximum Ratings G = Gate D = Drain VDSS TJ = 25 C to 150 C 1500 V S = Source Tab = Drain VDGR TJ = 25 C to 150 C

 9.18. Size:140K  ixys
 ixth2n150.pdf

Advance Technical Information High Voltage VDSS = 1500V IXTH2N150 ID25 = 2A Power MOSFET RDS(on) 9.2 N-Channel Enhancement Mode Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1500 V VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V G D Tab VGSS Continuous 30 V S VGSM Transient 40 V G