IXTH30N60P Todos los transistores

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IXTH30N60P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTH30N60P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 540 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Tensión umbral compuerta-fuente Vgs(th): 5 V

Corriente continua de drenaje (Id): 30 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 500 nS

Resistencia drenaje-fuente RDS(on): 0.24 Ohm

Empaquetado / Estuche: TO247

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IXTH30N60P Datasheet (PDF)

1.1. ixth30n60p ixtq30n60p ixtt30n60p ixtv30n60p.pdf Size:352K _ixys

IXTH30N60P
IXTH30N60P

IXTH 30N60P VDSS = 600 V PolarHVTM IXTQ 30N60P ID25 = 30 A Power MOSFET ? ? ? ? IXTT 30N60P RDS(on) ? 240 m? ? ? ? ? N-Channel Enhancement Mode IXTV 30N60P Avalanche Rated IXTV 30N60PS Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V VGSS Continuous 30 V VGSM Transient 40 V G D (TAB) D ID25 TC =

3.1. ixth30n50l2-ixtq30n50l2-ixtt30n50l2.pdf Size:142K _ixys

IXTH30N60P
IXTH30N60P

IXTH30N50L2 VDSS = 500V Linear L2TM Power IXTQ30N50L2 ID25 = 30A MOSFET with extended ? ? IXTT30N50L2 RDS(on) ? ? ? 200m? ? ? ? ? FBSOA D D D D O D O N-Channel Enhancement Mode TO-247 (IXTH) RGi w w G O O (TAB) S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V TO-3P (IXTQ) VDGR TJ = 25C to 150C, RGS = 1M? 500 V VGSS Continuous 20 V VGSM Transie

3.2. ixth30n45 ixth30n50.pdf Size:40K _ixys

IXTH30N60P
IXTH30N60P

Preliminary Data Sheet VDSS ID25 RDS(on) MegaMOSTMFET IXTH 30N45 450 V 30 A 0.16 Ω N-Channel Enhancement Mode IXTH 30N50 500 V 30 A 0.17 Ω TO-247 AD Symbol Test Conditions Maximum Ratings D (TAB) 30N45 450 V VDSS TJ = 25°C to 150°C 30N50 500 V 30N45 450 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 30N50 500 V TO-247 SMD ( ...S ) VGS Continuous ±20 V VGSM Transient ±30 V ID

3.3. ixth30n25.pdf Size:69K _ixys

IXTH30N60P
IXTH30N60P

Advance Technical Information Standard VDSS = 250 V IXTH 30N25 ID (cont) = 30 A Power MOSFET Ω RDS(on) = 75 mΩ Ω Ω Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 250 V VGS Continuous ±20 V D (TAB) VGSM Transient ±30 V ID25 TC = 25°C30 A IDM TC = 25°C, pulse wid

3.4. ixth30n50p ixtq30n50p ixtt30n50p ixtv30n50p.pdf Size:336K _ixys

IXTH30N60P
IXTH30N60P

VDSS = 500 V IXTH 30N50P PolarHVTM ID25 = 30 A IXTQ 30N50P Power MOSFET ? ? RDS(on) ? 200 m? ? ? ? ? ? ? IXTT 30N50P N-Channel Enhancement Mode IXTV 30N50P Avalanche Rated IXTV 30N50PS TO-247 AD (IXTH) (TAB) Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V VGSS Continuous 30 V VGSM Transient 40

Otros transistores... IXTH28N50Q , IXTH2R4N120P , IXTH300N04T2 , IXTH30N25 , IXTH30N50L , IXTH30N50L2 , IXTH30N50P , IXTH30N60L2 , IRF1010E , IXTH32P20T , IXTH360N055T2 , IXTH36N50P , IXTH36P10 , IXTH36P15P , IXTH3N100P , IXTH3N120 , IXTH3N150 .

 


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