IXTH3N100P Todos los transistores

 

IXTH3N100P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTH3N100P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 820 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.8 Ohm
   Paquete / Cubierta: TO247
 

 Búsqueda de reemplazo de IXTH3N100P MOSFET

   - Selección ⓘ de transistores por parámetros

 

IXTH3N100P Datasheet (PDF)

 ..1. Size:150K  ixys
ixta3n100p ixth3n100p ixtp3n100p.pdf pdf_icon

IXTH3N100P

IXTA3N100P VDSS = 1000VPolar VHVTMIXTH3N100P ID25 = 3APower MOSFET IXTP3N100P RDS(on) 4.8 N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 1000 VTO-220 (IXTP)VDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 20 VVGSM Transient 30 V(TAB)

 7.1. Size:131K  ixys
ixth3n120.pdf pdf_icon

IXTH3N100P

High VoltageVDSS = 1200 VIXTH 3N120Power MOSFETsID25 = 3 AN-Channel Enhancement Mode VDS(on) = 4.5 Avalanche Rated, High dv/dtPreliminary Data SheetSymbol Test Conditions Maximum RatingsTO-247VDSS TJ = 25C to 150C 3N120 1200 V3N110 1100 VVDGR TJ = 25C to 150C; RGS = 1 M 3N120 1200 V3N110 1100 VVGS Continuous 20 VG D (TAB)DVGSM Transient 30 V

 7.2. Size:152K  ixys
ixth3n150.pdf pdf_icon

IXTH3N100P

High Voltage VDSS = 1500VIXTH3N150ID25 = 3APower MOSFET RDS(on) 7.3 N-Channel Enhancement ModeAvalanche RatedFast Intrinsic DiodeTO-247Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 1500 VVDGR TJ = 25C to 150C, RGS = 1M 1500 VGDTabVGSS Continuous 30 VSVGSM Transient 40 VG = Gate D = Dr

 7.3. Size:175K  ixys
ixta3n120 ixtp3n120 ixth3n120.pdf pdf_icon

IXTH3N100P

High Voltage VDSS = 1200VIXTA3N120Power MOSFET ID25 = 3AIXTP3N120 RDS(on) 4.5 IXTH3N120N-Channel Enhancement ModeTO-263 AA (IXTA)Avalanche RatedFast Intrinsic DiodeGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C, RGS = 1M 1200 VVGSS Continuous

Otros transistores... IXTH30N50P , IXTH30N60L2 , IXTH30N60P , IXTH32P20T , IXTH360N055T2 , IXTH36N50P , IXTH36P10 , IXTH36P15P , STP80NF70 , IXTH3N120 , IXTH3N150 , IXTH40N50L2 , IXTH41N25 , IXTH420N04T2 , IXTH440N055T2 , IXTH44P15T , IXTH450P2 .

History: TPCP8001-H | SM6A24NSU | STD100NH02LT4 | RSM5853P | EM6K1 | NCE65NF068LL | IXTM10N60

 

 
Back to Top

 


 
.