IXTH3N100P Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTH3N100P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1000 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 820 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4.8 Ohm

Encapsulados: TO247

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IXTH3N100P datasheet

 ..1. Size:150K  ixys
 ixta3n100p ixth3n100p ixtp3n100p.pdf pdf_icon

IXTH3N100P

IXTA3N100P VDSS = 1000V Polar VHVTM IXTH3N100P ID25 = 3A Power MOSFET IXTP3N100P RDS(on) 4.8 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 150 C 1000 V TO-220 (IXTP) VDGR TJ = 25 C to 150 C, RGS = 1M 1000 V VGSS Continuous 20 V VGSM Transient 30 V (TAB)

 7.1. Size:131K  ixys
 ixth3n120.pdf pdf_icon

IXTH3N100P

High Voltage VDSS = 1200 V IXTH 3N120 Power MOSFETs ID25 = 3 A N-Channel Enhancement Mode VDS(on) = 4.5 Avalanche Rated, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 VDSS TJ = 25 C to 150 C 3N120 1200 V 3N110 1100 V VDGR TJ = 25 C to 150 C; RGS = 1 M 3N120 1200 V 3N110 1100 V VGS Continuous 20 V G D (TAB) D VGSM Transient 30 V

 7.2. Size:152K  ixys
 ixth3n150.pdf pdf_icon

IXTH3N100P

High Voltage VDSS = 1500V IXTH3N150 ID25 = 3A Power MOSFET RDS(on) 7.3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1500 V VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V G D Tab VGSS Continuous 30 V S VGSM Transient 40 V G = Gate D = Dr

 7.3. Size:175K  ixys
 ixta3n120 ixtp3n120 ixth3n120.pdf pdf_icon

IXTH3N100P

High Voltage VDSS = 1200V IXTA3N120 Power MOSFET ID25 = 3A IXTP3N120 RDS(on) 4.5 IXTH3N120 N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C, RGS = 1M 1200 V VGSS Continuous

MOSTRAR MÁS

Otros transistores... IXTH30N50P, IXTH30N60L2, IXTH30N60P, IXTH32P20T, IXTH360N055T2, IXTH36N50P, IXTH36P10, IXTH36P15P, 10N65, IXTH3N120, IXTH3N150, IXTH40N50L2, IXTH41N25, IXTH420N04T2, IXTH440N055T2, IXTH44P15T, IXTH450P2