IXTH440N055T2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTH440N055T2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1000 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 440 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 76 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0018 Ohm

Encapsulados: TO247

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IXTH440N055T2 datasheet

 ..1. Size:187K  ixys
 ixth440n055t2 tt440n055t2.pdf pdf_icon

IXTH440N055T2

Advance Technical Information TrenchT2TM VDSS = 55V IXTH440N055T2 ID25 = 440A Power MOSFET IXTT440N055T2 RDS(on) 1.8m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings D D (Tab) S VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C, RGS = 1M 55 V VGSS Continuous

 9.1. Size:113K  ixys
 ixth48n65x2.pdf pdf_icon

IXTH440N055T2

Advance Technical Information X2-Class VDSS = 650V IXTH48N65X2 Power MOSFET ID25 = 48A RDS(on) 68m N-Channel Enhancement Mode Avalanche Rated TO-247 G D Symbol Test Conditions Maximum Ratings S D (Tab) VDSS TJ = 25 C to 150 C 650 V G = Gate D = Drain VDGR TJ = 25 C to 150 C, RGS = 1M 650 V S = Source Tab = Drain VGSS Continu

 9.2. Size:107K  ixys
 ixth35n30 ixth40n30 ixtm40n30.pdf pdf_icon

IXTH440N055T2

VDSS ID25 RDS(on) MegaMOSTMFET IXTH 35N30 300 V 35 A 0.10 IXTH 40N30 300 V 40 A 0.085 IXTM 40N30 300 V 40 A 0.088 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 300 V VDGR TJ = 25 C to 150 C; RGS = 1 M 300 V VGS Continuous 20 V D (TAB) VGSM Tra

 9.3. Size:154K  ixys
 ixta460p2-ixtp460p2-ixtq460p2-ixth460p2.pdf pdf_icon

IXTH440N055T2

PolarP2TM VDSS = 500V IXTA460P2 ID25 = 24A Power MOSFET IXTP460P2 RDS(on) 270m IXTQ460P2 N-Channel Enhancement Mode trr(typ) = 400ns Avalanche Rated IXTH460P2 Fast Intrinsic Diode TO-220AB (IXTP) TO-263 AA (IXTA) TO-3P (IXTQ) G G S D G D S D (Tab) D (Tab) S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V

MOSTRAR MÁS

Otros transistores... IXTH36P10, IXTH36P15P, IXTH3N100P, IXTH3N120, IXTH3N150, IXTH40N50L2, IXTH41N25, IXTH420N04T2, 20N50, IXTH44P15T, IXTH450P2, IXTH460P2, IXTH48N20, IXTH48P20P, IXTH4N150, IXTH500N04T2, IXTH50N25T