IXTH6N120 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTH6N120

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 850 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm

Encapsulados: TO247

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IXTH6N120 datasheet

 ..1. Size:588K  ixys
 ixth6n120 ixtt6n120.pdf pdf_icon

IXTH6N120

IXTH 6N120 VDSS = 1200 V High Voltage IXTT 6N120 ID25 = 6 A Power MOSFET RDS(on) = 2.6 N-Channel Enhancement Mode Avalanche Rated Preliminary Data Sheet TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1200 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID25 TC = 25 C6 A

 7.1. Size:116K  ixys
 ixth6n150.pdf pdf_icon

IXTH6N120

Advance Technical Information High Voltage VDSS = 1500V IXTH6N150 ID25 = 6A Power MOSFET RDS(on) 3.5 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 1500 V VDGR TJ = 25 C to 150 C, RGS = 1M 1500 V G D Tab VGSS Continuous 20 V S VGSM Transient 30

 7.2. Size:184K  ixys
 ixta6n100d2-ixtp6n100d2-ixth6n100d2.pdf pdf_icon

IXTH6N120

Preliminary Technical Information Depletion Mode VDSX = 1000V IXTA6N100D2 MOSFET ID(on) > 6A IXTP6N100D2 RDS(on) 2.2 IXTH6N100D2 N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSX TJ = 25 C to 150 C 1000 V VGSX Continuous 20 V VGSM Transient 30 V PD TC = 25 C 300 W G D D (Tab) TJ -

 8.1. Size:206K  ixys
 ixta6n50d2 ixtp6n50d2 ixth6n50d2.pdf pdf_icon

IXTH6N120

Preliminary Technical Information Depletion Mode VDSX = 500V IXTA6N50D2 MOSFET ID(on) > 6A IXTP6N50D2 RDS(on) 500m IXTH6N50D2 N-Channel TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSX TJ = 25 C to 150 C 500 V VGSX Continuous 20 V VGSM Transient 30 V PD TC = 25 C 300 W G D D (Tab) TJ - 55 .

MOSTRAR MÁS

Otros transistores... IXTH50P10, IXTH52P10P, IXTH60N10, IXTH60N15, IXTH60N20L2, IXTH60N25, IXTH68P20T, IXTH6N100D2, IRFB7545, IXTH6N150, IXTH6N50D2, IXTH72N20, IXTH75N10L2, IXTH75N15, IXTH76N25T, IXTH76P10T, IXTH80N20L