IXTP06N120P Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTP06N120P  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 42 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 900 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 34 Ohm

Encapsulados: TO220

 Búsqueda de reemplazo de IXTP06N120P MOSFET

- Selecciónⓘ de transistores por parámetros

 

IXTP06N120P datasheet

 9.1. Size:177K  ixys
 ixty08n100d2-ixta08n100d2-ixtp08n100d2.pdf pdf_icon

IXTP06N120P

Preliminary Technical Information Depletion Mode VDSX = 1000V IXTY08N100D2 MOSFET ID(on) > 800mA IXTA08N100D2 RDS(on) 21 IXTP08N100D2 N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-263 AA (IXTA) VDSX TJ = 25 C to 150 C 1000 V VGSX Continuous 20 V VGSM Transient 30 V G S PD TC = 25 C60 W D (Tab) TJ -

 9.2. Size:270K  ixys
 ixty08n100d2 ixta08n100d2 ixtp08n100d2.pdf pdf_icon

IXTP06N120P

Depletion Mode VDSX = 1000V IXTY08N100D2 MOSFET ID(on) > 800mA IXTA08N100D2 RDS(on) 21 IXTP08N100D2 N-Channel D TO-252 (IXTY) G S G D (Tab) S TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings G VDSX TJ = 25 C to 150 C 1000 V S D (Tab) VGSX Continuous 20 V VGSM Transient 30 V TO-220AB (IXTP) PD TC = 25 C60 W TJ

 9.3. Size:94K  ixys
 ixtp01n100d ixtu01n100d ixty01n100d.pdf pdf_icon

IXTP06N120P

IXTP 01N100D VDSS = 1000 V High Voltage MOSFET IXTU 01N100D ID25 = 100 mA N-Channel, Depletion Mode IXTY 01N100D RDS(on) = 110 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSX TJ = 25 C to 150 C 1000 V VDGX TJ = 25 C to 150 C 1000 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S IDSS TC = 25 C; TJ = 25 C to

 9.4. Size:94K  ixys
 ixtp02n50d ixtu02n50d ixty02n50d.pdf pdf_icon

IXTP06N120P

IXTP 02N50D VDSS = 500 V High Voltage MOSFET IXTU 02N50D ID25 = 200 mA N-Channel, Depletion Mode IXTY 02N50D RDS(on) = 30 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSX TJ = 25 C to 150 C 500 V VDGX TJ = 25 C to 150 C 500 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V G D S IDSS TC = 25 C; TJ = 25 C to 150 C

MOSTRAR MÁS

Otros transistores... IXTN90N25L2, IXTN90P20P, IXTP01N100D, IXTP02N120P, IXTP02N50D, IXTP05N100, IXTP05N100M, IXTP05N100P, 8N60, IXTP08N100D2, IXTP08N100P, IXTP08N120P, IXTP08N50D2, IXTP100N04T2, IXTP102N15T, IXTP10N60P, IXTP10N60PM