IXTP08N100D2 Todos los transistores

 

IXTP08N100D2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTP08N100D2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 21 Ohm
   Paquete / Cubierta: TO220
 

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IXTP08N100D2 Datasheet (PDF)

 ..1. Size:270K  ixys
 ixty08n100d2 ixta08n100d2 ixtp08n100d2.pdf pdf_icon

IXTP08N100D2

Depletion Mode VDSX = 1000VIXTY08N100D2MOSFET ID(on) > 800mAIXTA08N100D2 RDS(on) 21 IXTP08N100D2N-ChannelDTO-252 (IXTY)GSGD (Tab)STO-263 AA (IXTA)Symbol Test Conditions Maximum RatingsGVDSX TJ = 25C to 150C 1000 VSD (Tab)VGSX Continuous 20 VVGSM Transient 30 VTO-220AB (IXTP)PD TC = 25C60 WTJ

 0.1. Size:177K  ixys
 ixty08n100d2-ixta08n100d2-ixtp08n100d2.pdf pdf_icon

IXTP08N100D2

Preliminary Technical InformationDepletion Mode VDSX = 1000VIXTY08N100D2MOSFET ID(on) > 800mAIXTA08N100D2 RDS(on) 21 IXTP08N100D2N-ChannelTO-252 (IXTY)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-263 AA (IXTA)VDSX TJ = 25C to 150C 1000 VVGSX Continuous 20 VVGSM Transient 30 VGSPD TC = 25C60 WD (Tab)TJ -

 7.1. Size:177K  ixys
 ixty08n50d2-ixta08n50d2-ixtp08n50d2.pdf pdf_icon

IXTP08N100D2

Preliminary Technical InformationDepletion Mode VDSX = 500VIXTY08N50D2MOSFET ID(on) > 800mAIXTA08N50D2 RDS(on) 4.6 IXTP08N50D2N-ChannelTO-252 (IXTY)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-263 AA (IXTA)VDSX TJ = 25C to 150C 500 VVGSX Continuous 20 VVGSM Transient 30 VGSPD TC = 25C60 WD (Tab)TJ - 55

 9.1. Size:94K  ixys
 ixtp01n100d ixtu01n100d ixty01n100d.pdf pdf_icon

IXTP08N100D2

IXTP 01N100DVDSS = 1000 VHigh Voltage MOSFETIXTU 01N100DID25 = 100 mAN-Channel, Depletion ModeIXTY 01N100DRDS(on) = 110 Preliminary Data SheetSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSX TJ = 25C to 150C 1000 VVDGX TJ = 25C to 150C 1000 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 VDSIDSS TC = 25C; TJ = 25C to

MOSTRAR MÁS

Otros transistores... IXTN90P20P , IXTP01N100D , IXTP02N120P , IXTP02N50D , IXTP05N100 , IXTP05N100M , IXTP05N100P , IXTP06N120P , AO3401 , IXTP08N100P , IXTP08N120P , IXTP08N50D2 , IXTP100N04T2 , IXTP102N15T , IXTP10N60P , IXTP10N60PM , IXTP10P15T .

History: APM4303KC | SSM6K32TU | LSDN65R380GT | SED3030M | 1N65L-AA3-R | 2SK3127B

 

 
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