IXTP102N15T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IXTP102N15T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 455 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 102 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 87 nC
   trⓘ - Tiempo de subida: 97 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: TO220

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IXTP102N15T Datasheet (PDF)

8.1. Size:54K ixys
ixtp10n60pm.pdf pdf_icon

Preliminary Technical InformationIXTP 10N60PM VDSS = 600 VPolarHVTMID25 = 5 APower MOSFET RDS(on) 740 m (Electrically Isolated Tab)N-Channel Enhancement ModeAvalanche RatedOVERMOLDED TO-220Symbol Test Conditions Maximum Ratings(IXTP...M) OUTLINEVDSS TJ = 25C to 175C 600 VVDGR TJ = 25C to 175C; RGS = 1 M 600 VVGS Continuou

9.1. Size:214K ixys
ixta152n085t ixtp152n085t.pdf pdf_icon

Preliminary Technical InformationVDSS = 85 VIXTA152N085TTrenchMVTMID25 = 152 AIXTP152N085TPower MOSFET RDS(on) 7.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VGVGSM Transient 20 VS(TAB)ID25

9.2. Size:200K ixys
ixta12n65x2 ixth12n65x2 ixtp12n65x2.pdf pdf_icon

Advance Technical InformationX2-Class VDSS = 650VIXTA12N65X2Power MOSFET ID25 = 12AIXTP12N65X2 RDS(on) 300m IXTH12N65X2N-Channel Enhancement ModeTO-263 AA (IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30

9.3. Size:91K ixys
ixtp1r6n50p ixty1r6n50p.pdf pdf_icon

IXTP 1R6N50P VDSS = 500 VPolarHVTMIXTY 1R6N50P ID25 = 1.6 APower MOSFET RDS(on) 6.5 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum Ratings TO-220 (IXTP)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 30 VG(TAB)DVGSM Transient 40 VSID25 TC = 25C 1.6 AIDM

9.4. Size:95K ixys
ixta1n100p ixtp1n100p.pdf pdf_icon

Advance Technical InformationIXTA 1N100P VDSS = 1000 VPolarHVTMIXTP 1N100P ID25 = 1.2 APower MOSFETRDS(on) = 13 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VGVGS Continuous 20 VS(TAB)VGSM Transient 30 VID25 TC = 25C

9.5. Size:60K ixys
ixta1n80 ixtp1n80 ixty1n80.pdf pdf_icon

IXTA 1N80VDSS = 800 VHigh Voltage MOSFETIXTP 1N80ID25 = 750 mAIXTY 1N80N-Channel Enhancement ModeRDS(on) = 11 Avalanche Energy RatedPreliminary DataSymbol Test Conditions Maximum Ratings TO-220AB (IXTP)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VD (TAB)VGS Continuous 20 VGDSVGSM Transient 30 VID25 T

9.6. Size:133K ixys
ixtp160n085t.pdf pdf_icon

Advance Technical InformationIXTQ 160N085T VDSS = 85 VTrench GateIXTA 160N085T ID25 = 160 APower MOSFETIXTP 160N085T RDS(on) = 6.0 mN-Channel Enhancement ModeTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C85 VGVDGR TJ = 25C to 175C; RGS = 1 M 85 VD(TAB)SVGSM 20 VTO-220 (IXTP)ID25 TC = 25C 160 AIDRM

9.7. Size:216K ixys
ixta110n055t ixtp110n055t.pdf pdf_icon

Preliminary Technical InformationIXTA110N055T VDSS = 55 VTrenchMVTMIXTP110N055T ID25 = 110 APower MOSFET RDS(on) 7.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VGVGSM Transient 20 VS(TAB)ID25 TC

9.8. Size:254K ixys
ixta110n055p ixtp110n055p ixtq110n055p.pdf pdf_icon

IXTA 110N055P VDSS = 55 VPolarHTTMIXTP 110N055P ID25 = 110 APower MOSFETIXTQ 110N055P RDS(on) 13.5 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsGSVDSS TJ = 25 C to 175 C55 V(TAB)VDGR TJ = 25 C to 175 C; RGS = 1 M 55 VVGS Continuous 20 VTO-220 (IXTP)VGSM Tranise

9.9. Size:147K ixys
ixta14n60p ixtq14n60p ixtp14n60p.pdf pdf_icon

IXTA 14N60P VDSS = 600 VPolarHVTMIXTP 14N60P ID25 = 14 APower MOSFET IXTQ 14N60P RDS(on) 550 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25C to 150C 600 VVDGR TJ = 25C to 150C; RGS = 1 M 600 VGVGS Continuous 30 V S(TAB)VGSM Tranisent 40 VID25 TC = 25C14 A

9.10. Size:179K ixys
ixty1r6n50d2 ixta1r6n50d2 ixtp1r6n50d2.pdf pdf_icon

Preliminary Technical InformationDepletion Mode VDSX = 500VIXTY1R6N50D2MOSFET ID(on) > 1.6AIXTA1R6N50D2 RDS(on) 2.3 IXTP1R6N50D2N-ChannelTO-252 (IXTY)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-263 AA (IXTA)VDSX TJ = 25C to 150C 500 VVGSX Continuous 20 VVGSM Transient 30 VGSPD TC = 25C 100 WD (Tab)TJ -

9.11. Size:161K ixys
ixta1n80p ixtp1n80p ixtu1n80p ixty1n80p.pdf pdf_icon

Preliminary Technical InformationVDSS = 800VIXTA1N80PPolarTM PowerID25 = 1AIXTP1N80PMOSFET RDS(on) 14 IXTU1N80PIXTY1N80PN-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA) TO-220 (IXTP) TO-251 (IXTU)GG(TAB)(TAB)(TAB)S G DDSSSymbol Test Conditions Maximum RatingsTO-252 (IXTY)VDSS TJ = 25C to 150C 800 VVD

9.12. Size:143K ixys
ixta16n50p ixtp16n50p ixtq16n50p.pdf pdf_icon

IXTA 16N50P VDSS = 500 VPolarHVTMIXTP 16N50P ID25 = 16 APower MOSFETIXTQ 16N50P RDS(on) 400 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum Ratings TO-263 (IXTA)VDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VGVGS Continuous 30 VSVGSM Transient 40 V(TAB)ID25 TC = 25C16 A

9.13. Size:344K ixys
ixta12n70x2 ixtp12n70x2 ixth12n70x2.pdf pdf_icon

Preliminary Technical InformationX2-Class VDSS = 700VIXTA12N70X2Power MOSFET ID25 = 12AIXTP12N70X2 RDS(on) 300m IXTH12N70X2N-Channel Enhancement ModeTO-263 (IXTA)GSD (Tab)Symbol Test Conditions Maximum Ratings TO-220 (IXTP)VDSS TJ = 25C to 150C 700 VVDGR TJ = 25C to 150C, RGS = 1M 700 VVGSS Continuous 30 V

9.14. Size:174K ixys
ixta160n10t ixtp160n10t.pdf pdf_icon

Preliminary Technical InformationIXTA160N10T VDSS = 100 VTrenchMVTMIXTP160N10T ID25 = 160 APower MOSFET RDS(on) 7.0 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 175C 100 VTO-220 (IXTP)VDGR TJ = 25C to 175C; RGS = 1 M 100 VVGSM Transient 30 V

9.15. Size:535K ixys
ixta1n100 ixtp1n100.pdf pdf_icon

VDSS = 1000 VIXTA 1N100High Voltage MOSFETIXTP 1N100 ID25 = 1.5 A RDS(on) = 11 N-Channel Enhancement ModeAvalanche Energy RatedSymbol Test Conditions Maximum Ratings TO-220AB (IXTP)VDSS TJ = 25C to 150C 1000 VVDGR TJ = 25C to 150C; RGS = 1 M 1000 VVGS Continuous 30 VD (TAB)GVGSM Transient 40 VDSID25 TC = 25C 1.5 AIDM TC =

9.16. Size:221K ixys
ixta182n055t ixtp182n055t.pdf pdf_icon

Preliminary Technical InformationIXTA182N055T VDSS = 55 VTrenchMVTMIXTP182N055T ID25 = 182 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VGVGSM Transient 20 VS(TAB)ID25 T

9.17. Size:154K ixys
ixta180n10t ixtp180n10t.pdf pdf_icon

IXTA180N10T VDSS = 100VTrenchMVTMIXTP180N10T ID25 = 180APower MOSFET RDS(on) 6.4m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 175C 100 VTO-220 (IXTP)VDGR TJ = 25C to 175C, RGS = 1M 100 VVGSM Transient 30 VID25 TC = 25C 180 AILRMS Lead Cur

9.18. Size:133K ixys
ixth15n50l2-ixtp15n50l2.pdf pdf_icon

Linear L2TM Power VDSS = 500VIXTH15N50L2MOSFET w/Extended ID25 = 15AIXTP15N50L2 RDS(on) 480m FBSOAN-Channel Enhancement ModeAvalanche RatedTO-220 (IXTP)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VG (TAB)DVDGR TJ = 25C to 150C, RGS = 1M 500 VSVGSS Continuous 20 VTO-247 (IXTH)VGSM Transient 30

9.19. Size:174K ixys
ixta160n075t ixtp160n075t.pdf pdf_icon

Preliminary Technical InformationIXTA160N075T VDSS = 75 VTrenchMVTMIXTP160N075T ID25 = 160 APower MOSFET RDS(on) 6.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum Ratings TO-263 (IXTA)VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VGVGSM Transient 20 V S D (TAB)ID25 TC = 25C 16

9.20. Size:108K ixys
ixta180n055t ixtp180n055t ixtq180n055t.pdf pdf_icon

Advance Technical InformationIXTQ 180N055T VDSS = 55 VTrench GateIXTA 180N055T ID25 = 180 APower MOSFETIXTP 180N055T RDS(on) = 4.0 mN-Channel Enhancement ModeTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C55 VGVDGR TJ = 25C to 175C; RGS = 1 M 55 VD(TAB)SVGSM 20 VTO-220 (IXTP)ID25 TC = 25C 180 AIDRM

9.21. Size:204K ixys
ixta160n04t2 ixtp160n04t2.pdf pdf_icon

Preliminary Technical InformationIXTA160N04T2 VDSS = 40VTrenchT2TMIXTP160N04T2 ID25 = 160APower MOSFET RDS(on) 5m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C40 VSVDGR TJ = 25C to 175C, RGS = 1M 40 V(TAB)VGSM Transient 20 VTO-220 (IXTP)ID25 TC

9.22. Size:214K ixys
ixta180n085t ixtp180n085t.pdf pdf_icon

Preliminary Technical InformationIXTA180N085T VDSS = 85 VTrenchMVTMIXTP180N085T ID25 = 180 APower MOSFET RDS(on) 5.5 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VGVGSM Transient 20 VS(TAB)ID25 T

9.23. Size:259K inchange semiconductor
ixtp170n075t2.pdf pdf_icon

isc N-Channel MOSFET Transistor IXTP170N075T2FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

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