IXTP14N60PM Todos los transistores

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IXTP14N60PM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTP14N60PM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 75 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Tensión umbral compuerta-fuente Vgs(th): 5.5 V

Corriente continua de drenaje (Id): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 500 nS

Resistencia drenaje-fuente RDS(on): 0.55 Ohm

Empaquetado / Estuche: TO220

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IXTP14N60PM Datasheet (PDF)

1.1. ixta14n60p ixtq14n60p ixtp14n60p.pdf Size:147K _ixys

IXTP14N60PM
IXTP14N60PM

IXTA 14N60P VDSS = 600 V PolarHVTM IXTP 14N60P ID25 = 14 A Power MOSFET ? ? IXTQ 14N60P RDS(on) ? 550 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25C to 150C 600 V VDGR TJ = 25C to 150C; RGS = 1 M? 600 V G VGS Continuous 30 V S (TAB) VGSM Tranisent 40 V ID25 TC = 25C14 A TO-220 (IXTP) IDM TC =

5.1. ixta110n055p ixtp110n055p ixtq110n055p.pdf Size:254K _ixys

IXTP14N60PM
IXTP14N60PM

IXTA 110N055P VDSS = 55 V PolarHTTM IXTP 110N055P ID25 = 110 A Power MOSFET IXTQ 110N055P RDS(on) ? 13.5 m? ? ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25 C to 175 C55 V (TAB) VDGR TJ = 25 C to 175 C; RGS = 1 M? 55 V VGS Continuous 20 V TO-220 (IXTP) VGSM Tranisent 30 V ID25 TC = 25 C 110

5.2. ixta180n085t ixtp180n085t.pdf Size:214K _ixys

IXTP14N60PM
IXTP14N60PM

Preliminary Technical Information IXTA180N085T VDSS = 85 V TrenchMVTM IXTP180N085T ID25 = 180 A Power MOSFET ? ? RDS(on) ? 5.5 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 85 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 180 A ILRMS Lead Cu

5.3. ixta1n80p ixtp1n80p ixtu1n80p ixty1n80p.pdf Size:161K _ixys

IXTP14N60PM
IXTP14N60PM

Preliminary Technical Information VDSS = 800V IXTA1N80P PolarTM Power ID25 = 1A IXTP1N80P MOSFET ? ? RDS(on) ? ? ? 14? ? ? ? ? IXTU1N80P IXTY1N80P N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) TO-220 (IXTP) TO-251 (IXTU) G G (TAB) (TAB) (TAB) S G D D S S Symbol Test Conditions Maximum Ratings TO-252 (IXTY) VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150

5.4. ixta110n055t ixtp110n055t.pdf Size:216K _ixys

IXTP14N60PM
IXTP14N60PM

Preliminary Technical Information IXTA110N055T VDSS = 55 V TrenchMVTM IXTP110N055T ID25 = 110 A Power MOSFET ? ? RDS(on) ? 7.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 55 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 110 A ILRMS Lead Cur

5.5. ixta152n085t ixtp152n085t.pdf Size:214K _ixys

IXTP14N60PM
IXTP14N60PM

Preliminary Technical Information VDSS = 85 V IXTA152N085T TrenchMVTM ID25 = 152 A IXTP152N085T Power MOSFET ? ? RDS(on) ? 7.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 85 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 152 A ILRMS Lead C

5.6. ixta1n100p ixtp1n100p.pdf Size:95K _ixys

IXTP14N60PM
IXTP14N60PM

Advance Technical Information IXTA 1N100P VDSS = 1000 V PolarHVTM IXTP 1N100P ID25 = 1.2 A Power MOSFET ? RDS(on) = 13 ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V G VGS Continuous 20 V S (TAB) VGSM Transient 30 V ID25 TC = 25C 1.2 A IDM TC =

5.7. ixta1n100 ixtp1n100.pdf Size:535K _ixys

IXTP14N60PM
IXTP14N60PM

VDSS = 1000 V IXTA 1N100 High Voltage MOSFET IXTP 1N100 ID25 = 1.5 A ? RDS(on) = 11 ? ? ? ? N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M? 1000 V VGS Continuous 30 V D (TAB) G VGSM Transient 40 V D S ID25 TC = 25C 1.5 A IDM TC = 25C, pulse width lim

5.8. ixtp10n60pm.pdf Size:54K _ixys

IXTP14N60PM
IXTP14N60PM

Preliminary Technical Information IXTP 10N60PM VDSS = 600 V PolarHVTM ID25 = 5 A Power MOSFET ? ? RDS(on) ? ? ? 740 m? ? ? ? ? (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings (IXTP...M) OUTLINE VDSS TJ = 25C to 175C 600 V VDGR TJ = 25C to 175C; RGS = 1 M? 600 V VGS Continuous 30 V VGSM Transient

5.9. ixth15n50l2-ixtp15n50l2.pdf Size:133K _ixys

IXTP14N60PM
IXTP14N60PM

Linear L2TM Power VDSS = 500V IXTH15N50L2 MOSFET w/Extended ID25 = 15A IXTP15N50L2 ? ? RDS(on) ? 480m? ? ? ? ? ? ? FBSOA N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 500 V G (TAB) D VDGR TJ = 25C to 150C, RGS = 1M? 500 V S VGSS Continuous 20 V TO-247 (IXTH) VGSM Transient 30 V ID25 TC = 25C15 A I

5.10. ixta16n50p ixtp16n50p ixtq16n50p.pdf Size:143K _ixys

IXTP14N60PM
IXTP14N60PM

IXTA 16N50P VDSS = 500 V PolarHVTM IXTP 16N50P ID25 = 16 A Power MOSFET IXTQ 16N50P RDS(on) ? ? ? ? ? 400 m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M? 500 V G VGS Continuous 30 V S VGSM Transient 40 V (TAB) ID25 TC = 25C16 A IDM TC = 25C, pulse wid

5.11. ixtp1r6n50p ixty1r6n50p.pdf Size:91K _ixys

IXTP14N60PM
IXTP14N60PM

IXTP 1R6N50P VDSS = 500 V PolarHVTM IXTY 1R6N50P ID25 = 1.6 A Power MOSFET ? ? RDS(on) ? 6.5 ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M? 500 V VGS Continuous 30 V G (TAB) D VGSM Transient 40 V S ID25 TC = 25C 1.6 A IDM TC = 25C, pulse width li

5.12. ixta182n055t ixtp182n055t.pdf Size:221K _ixys

IXTP14N60PM
IXTP14N60PM

Preliminary Technical Information IXTA182N055T VDSS = 55 V TrenchMVTM IXTP182N055T ID25 = 182 A Power MOSFET ? ? RDS(on) ? 5.0 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 55 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 182 A ILRMS Lead Cu

5.13. ixta160n04t2 ixtp160n04t2.pdf Size:204K _ixys

IXTP14N60PM
IXTP14N60PM

Preliminary Technical Information IXTA160N04T2 VDSS = 40V TrenchT2TM IXTP160N04T2 ID25 = 160A Power MOSFET ? ? RDS(on) ? ? ? 5m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25C to 175C40 V S VDGR TJ = 25C to 175C, RGS = 1M? 40 V (TAB) VGSM Transient 20 V TO-220 (IXTP) ID25 TC = 25C 160 A ILRMS Lead

5.14. ixta1n80 ixtp1n80 ixty1n80.pdf Size:60K _ixys

IXTP14N60PM
IXTP14N60PM

IXTA 1N80 VDSS = 800 V High Voltage MOSFET IXTP 1N80 ID25 = 750 mA IXTY 1N80 N-Channel Enhancement Mode ? RDS(on) = 11 ? ? ? ? Avalanche Energy Rated Preliminary Data Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25C to 150C 800 V VDGR TJ = 25C to 150C; RGS = 1 M? 800 V D (TAB) VGS Continuous 20 V G D S VGSM Transient 30 V ID25 TC = 25C 750 mA TO-2

5.15. ixta160n10t ixtp160n10t.pdf Size:174K _ixys

IXTP14N60PM
IXTP14N60PM

Preliminary Technical Information IXTA160N10T VDSS = 100 V TrenchMVTM IXTP160N10T ID25 = 160 A Power MOSFET ? ? RDS(on) ? 7.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25C to 175C 100 V TO-220 (IXTP) VDGR TJ = 25C to 175C; RGS = 1 M? 100 V VGSM Transient 30 V ID25 TC = 25C 160 A IL

5.16. ixta180n10t ixtp180n10t.pdf Size:154K _ixys

IXTP14N60PM
IXTP14N60PM

IXTA180N10T VDSS = 100V TrenchMVTM IXTP180N10T ID25 = 180A Power MOSFET ? ? ? ? RDS(on) ? 6.4m? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25C to 175C 100 V TO-220 (IXTP) VDGR TJ = 25C to 175C, RGS = 1M? 100 V VGSM Transient 30 V ID25 TC = 25C 180 A ILRMS Lead Current limit, RMS 75 A G

5.17. ixta160n075t ixtp160n075t.pdf Size:174K _ixys

IXTP14N60PM
IXTP14N60PM

Preliminary Technical Information IXTA160N075T VDSS = 75 V TrenchMVTM IXTP160N075T ID25 = 160 A Power MOSFET ? ? RDS(on) ? 6.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25C to 175C75 V VDGR TJ = 25C to 175C; RGS = 1 M? 75 V G VGSM Transient 20 V S D (TAB) ID25 TC = 25C 160 A TO-220 (IXTP) ILRMS

5.18. ixty1r6n50d2 ixta1r6n50d2 ixtp1r6n50d2.pdf Size:179K _ixys

IXTP14N60PM
IXTP14N60PM

Preliminary Technical Information Depletion Mode VDSX = 500V IXTY1R6N50D2 MOSFET ID(on) > 1.6A IXTA1R6N50D2 ? ? RDS(on) ? 2.3? ? ? ? ? ? ? IXTP1R6N50D2 N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-263 AA (IXTA) VDSX TJ = 25C to 150C 500 V VGSX Continuous 20 V VGSM Transient 30 V G S PD TC = 25C 100 W D (Tab) TJ - 55 ... +150 C TJM 15

Otros transistores... IXTP120P065T , IXTP12N50P , IXTP12N50PM , IXTP130N065T2 , IXTP130N10T , IXTP140N055T2 , IXTP140P05T , IXTP14N60P , APT50M38JFLL , IXTP152N085T , IXTP15N50L2 , IXTP15P15T , IXTP160N04T2 , IXTP160N075T , IXTP160N10T , IXTP16N50P , IXTP16N50PM .

 


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