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IXTP160N10T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTP160N10T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 430 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 160 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
   Carga de la puerta (Qg): 132 nC
   Tiempo de subida (tr): 60 nS
   Resistencia entre drenaje y fuente RDS(on): 0.007 Ohm
   Paquete / Cubierta: TO220

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IXTP160N10T Datasheet (PDF)

 ..1. Size:174K  ixys
ixta160n10t ixtp160n10t.pdf

IXTP160N10T IXTP160N10T

Preliminary Technical InformationIXTA160N10T VDSS = 100 VTrenchMVTMIXTP160N10T ID25 = 160 APower MOSFET RDS(on) 7.0 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 175C 100 VTO-220 (IXTP)VDGR TJ = 25C to 175C; RGS = 1 M 100 VVGSM Transient 30 V

 6.1. Size:133K  ixys
ixtp160n085t.pdf

IXTP160N10T IXTP160N10T

Advance Technical InformationIXTQ 160N085T VDSS = 85 VTrench GateIXTA 160N085T ID25 = 160 APower MOSFETIXTP 160N085T RDS(on) = 6.0 mN-Channel Enhancement ModeTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C85 VGVDGR TJ = 25C to 175C; RGS = 1 M 85 VD(TAB)SVGSM 20 VTO-220 (IXTP)ID25 TC = 25C 160 AIDRM

 6.2. Size:174K  ixys
ixta160n075t ixtp160n075t.pdf

IXTP160N10T IXTP160N10T

Preliminary Technical InformationIXTA160N075T VDSS = 75 VTrenchMVTMIXTP160N075T ID25 = 160 APower MOSFET RDS(on) 6.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum Ratings TO-263 (IXTA)VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VGVGSM Transient 20 V S D (TAB)ID25 TC = 25C 16

 6.3. Size:204K  ixys
ixta160n04t2 ixtp160n04t2.pdf

IXTP160N10T IXTP160N10T

Preliminary Technical InformationIXTA160N04T2 VDSS = 40VTrenchT2TMIXTP160N04T2 ID25 = 160APower MOSFET RDS(on) 5m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C40 VSVDGR TJ = 25C to 175C, RGS = 1M 40 V(TAB)VGSM Transient 20 VTO-220 (IXTP)ID25 TC

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