IXTP200N075T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTP200N075T  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 430 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 200 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm

Encapsulados: TO220

 Búsqueda de reemplazo de IXTP200N075T MOSFET

- Selecciónⓘ de transistores por parámetros

 

IXTP200N075T datasheet

 ..1. Size:215K  ixys
 ixta200n075t ixtp200n075t.pdf pdf_icon

IXTP200N075T

Preliminary Technical Information IXTA200N075T VDSS = 75 V TrenchMVTM IXTP200N075T ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V G VGSM Transient 20 V S (TAB) ID25

 5.1. Size:215K  ixys
 ixta200n085t ixtp200n085t.pdf pdf_icon

IXTP200N075T

Preliminary Technical Information IXTA 200N085T VDSS = 85 V TrenchMVTM IXTP 200N085T ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V G VGSM Transient 20 V S (TAB) ID25

 8.1. Size:127K  ixys
 ixtp20n65xm.pdf pdf_icon

IXTP200N075T

Preliminary Technical Information X-Class VDSS = 650V IXTP20N65XM Power MOSFET ID25 = 9A RDS(on) 210m N-Channel Enhancement Mode OVERMOLDED Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 650 V G D S VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V G = Gate D = Drain VGSM Transient 40 V S = So

 8.2. Size:231K  ixys
 ixta20n65x ixth20n65x ixtp20n65x.pdf pdf_icon

IXTP200N075T

Preliminary Technical Information X-Class VDSS = 650V IXTA20N65X Power MOSFET ID25 = 20A IXTP20N65X RDS(on) 210m IXTH20N65X N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V VG

MOSTRAR MÁS

Otros transistores... IXTP1N80P, IXTP1R4N100P, IXTP1R4N120P, IXTP1R4N60P, IXTP1R6N100D2, IXTP1R6N50D2, IXTP1R6N50P, IXTP200N055T2, 7N65, IXTP200N085T, IXTP220N04T2, IXTP220N055T, IXTP220N075T, IXTP22N50PM, IXTP230N075T2, IXTP240N055T, IXTP24P085T