IXTP200N075T Todos los transistores

 

IXTP200N075T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTP200N075T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 430 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 200 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 80 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: TO220
 

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IXTP200N075T Datasheet (PDF)

 ..1. Size:215K  ixys
 ixta200n075t ixtp200n075t.pdf pdf_icon

IXTP200N075T

Preliminary Technical InformationIXTA200N075TVDSS = 75 VTrenchMVTMIXTP200N075TID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C75 VVDGR TJ = 25 C to 175 C; RGS = 1 M 75 VGVGSM Transient 20 VS(TAB)ID25

 5.1. Size:215K  ixys
 ixta200n085t ixtp200n085t.pdf pdf_icon

IXTP200N075T

Preliminary Technical InformationIXTA 200N085T VDSS = 85 VTrenchMVTMIXTP 200N085T ID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VGVGSM Transient 20 VS(TAB)ID25

 8.1. Size:127K  ixys
 ixtp20n65xm.pdf pdf_icon

IXTP200N075T

Preliminary Technical InformationX-Class VDSS = 650VIXTP20N65XMPower MOSFET ID25 = 9A RDS(on) 210m N-Channel Enhancement ModeOVERMOLDEDSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 650 VGDSVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VG = Gate D = DrainVGSM Transient 40 VS = So

 8.2. Size:231K  ixys
 ixta20n65x ixth20n65x ixtp20n65x.pdf pdf_icon

IXTP200N075T

Preliminary Technical InformationX-Class VDSS = 650VIXTA20N65XPower MOSFET ID25 = 20AIXTP20N65X RDS(on) 210m IXTH20N65XN-Channel Enhancement ModeTO-263 (IXTA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VVG

MOSTRAR MÁS

Otros transistores... IXTP1N80P , IXTP1R4N100P , IXTP1R4N120P , IXTP1R4N60P , IXTP1R6N100D2 , IXTP1R6N50D2 , IXTP1R6N50P , IXTP200N055T2 , 7N65 , IXTP200N085T , IXTP220N04T2 , IXTP220N055T , IXTP220N075T , IXTP22N50PM , IXTP230N075T2 , IXTP240N055T , IXTP24P085T .

History: VN1210N5 | SPA04N50C3 | IXFH68N20 | IPD65R660CFD | AON6982 | IXFH6N120P | AON6406

 

 
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