IXTP3N120 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTP3N120

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 200 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 700 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4.5 Ohm

Encapsulados: TO220

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IXTP3N120 datasheet

 ..1. Size:562K  ixys
 ixta3n120 ixtp3n120.pdf pdf_icon

IXTP3N120

VDSS ID25 RDS(on) High Voltage IXTA 3N120 Power MOSFETs 1200 V 3 A 4.5 IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1200 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25 C3 A IDM TC =

 ..2. Size:175K  ixys
 ixta3n120 ixtp3n120 ixth3n120.pdf pdf_icon

IXTP3N120

High Voltage VDSS = 1200V IXTA3N120 Power MOSFET ID25 = 3A IXTP3N120 RDS(on) 4.5 IXTH3N120 N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C, RGS = 1M 1200 V VGSS Continuous

 7.1. Size:150K  ixys
 ixta3n100p ixth3n100p ixtp3n100p.pdf pdf_icon

IXTP3N120

IXTA3N100P VDSS = 1000V Polar VHVTM IXTH3N100P ID25 = 3A Power MOSFET IXTP3N100P RDS(on) 4.8 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 150 C 1000 V TO-220 (IXTP) VDGR TJ = 25 C to 150 C, RGS = 1M 1000 V VGSS Continuous 20 V VGSM Transient 30 V (TAB)

 8.1. Size:237K  ixys
 ixta3n50p ixtp3n50p ixty3n50p.pdf pdf_icon

IXTP3N120

IXTA 3N50P VDSS = 500 V PolarHVTM IXTP 3N50P ID25 = 3.6 A Power MOSFET IXTY 3N50P RDS(on) 2.0 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGSS 30 V VGSM 40 V (TAB) G D S ID25 TC = 25 C 3.6 A IDM

MOSTRAR MÁS

Otros transistores... IXTP32N20T, IXTP32P05T, IXTP32P20T, IXTP36N30P, IXTP36P15P, IXTP3N100D2, IXTP3N100P, IXTP3N110, AON7506, IXTP3N50D2, IXTP3N50P, IXTP3N60P, IXTP42N15T, IXTP42N25P, IXTP44N10T, IXTP44P15T, IXTP450P2