IXTP3N50D2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXTP3N50D2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 125 W
Voltaje máximo drenador - fuente |Vds|: 500 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 3 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Carga de la puerta (Qg): 40 nC
Resistencia entre drenaje y fuente RDS(on): 1.5 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET IXTP3N50D2
IXTP3N50D2 Datasheet (PDF)
ixta3n50d2-ixtp3n50d2.pdf
Depletion Mode VDSX = 500VIXTA3N50D2MOSFET ID(on) > 3AIXTP3N50D2 RDS(on) 1.5 N-ChannelTO-263 AA (IXTA)GSymbol Test Conditions Maximum RatingsSVDSX TJ = 25C to 150C 500 VD (Tab)VGSX Continuous 20 VVGSM Transient 30 VTO-220AB (IXTP)PD TC = 25C 125 WTJ - 55 ... +150 CTJM 150 CTstg - 55 ... +150 CGDD (Tab)
ixta3n50p ixtp3n50p ixty3n50p.pdf
IXTA 3N50P VDSS = 500 VPolarHVTMIXTP 3N50P ID25 = 3.6 APower MOSFET IXTY 3N50P RDS(on) 2.0 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGSS 30 VVGSM 40 V(TAB)GDSID25 TC = 25 C 3.6 AIDM
ixta3n120 ixtp3n120.pdf
VDSS ID25 RDS(on)High VoltageIXTA 3N120Power MOSFETs 1200 V 3 A 4.5 IXTP 3N120N-Channel Enhancement ModeAvalanche Rated, High dv/dtSymbol Test Conditions Maximum RatingsTO-220 (IXTP)VDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C; RGS = 1 M 1200 VVGS Continuous 20 VD (TAB)GVGSM Transient 30 V DSID25 TC = 25C3 AIDM TC =
ixta3n100p ixth3n100p ixtp3n100p.pdf
IXTA3N100P VDSS = 1000VPolar VHVTMIXTH3N100P ID25 = 3APower MOSFET IXTP3N100P RDS(on) 4.8 N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)GSSymbol Test Conditions Maximum Ratings(TAB)VDSS TJ = 25C to 150C 1000 VTO-220 (IXTP)VDGR TJ = 25C to 150C, RGS = 1M 1000 VVGSS Continuous 20 VVGSM Transient 30 V(TAB)
ixta3n120 ixtp3n120 ixth3n120.pdf
High Voltage VDSS = 1200VIXTA3N120Power MOSFET ID25 = 3AIXTP3N120 RDS(on) 4.5 IXTH3N120N-Channel Enhancement ModeTO-263 AA (IXTA)Avalanche RatedFast Intrinsic DiodeGSD (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXTP)VDSS TJ = 25C to 150C 1200 VVDGR TJ = 25C to 150C, RGS = 1M 1200 VVGSS Continuous
ixta3n60p ixtp3n60p ixty3n60p.pdf
IXTA 3N60PVDSS = 600 VPolarHVTMIXTP 3N60PID25 = 3.0 APower MOSFETIXTY 3N60P RDS(on) 2.9 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGS Continuous 30 VGSVGSM Transient 40 V(TAB)ID25 T
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