IXTP3N50D2 Todos los transistores

 0.1. Size:168K  ixys
 ixta3n50d2-ixtp3n50d2.pdf

Depletion Mode VDSX = 500V IXTA3N50D2 MOSFET ID(on) > 3A IXTP3N50D2 RDS(on) 1.5 N-Channel TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings S VDSX TJ = 25 C to 150 C 500 V D (Tab) VGSX Continuous 20 V VGSM Transient 30 V TO-220AB (IXTP) PD TC = 25 C 125 W TJ - 55 ... +150 C TJM 150 C Tstg - 55 ... +150 C G D D (Tab)

 6.1. Size:237K  ixys
 ixta3n50p ixtp3n50p ixty3n50p.pdf

IXTA 3N50P VDSS = 500 V PolarHVTM IXTP 3N50P ID25 = 3.6 A Power MOSFET IXTY 3N50P RDS(on) 2.0 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGSS 30 V VGSM 40 V (TAB) G D S ID25 TC = 25 C 3.6 A IDM

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 ixta3n120 ixtp3n120.pdf

VDSS ID25 RDS(on) High Voltage IXTA 3N120 Power MOSFETs 1200 V 3 A 4.5 IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C; RGS = 1 M 1200 V VGS Continuous 20 V D (TAB) G VGSM Transient 30 V D S ID25 TC = 25 C3 A IDM TC =

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 ixtm3n80 ixtm3n80a ixtm3n90 ixtm3n90a ixtp3n80 ixtp3n80a ixtp3n90 ixtp3n90a.pdf

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 ixta3n100p ixth3n100p ixtp3n100p.pdf

IXTA3N100P VDSS = 1000V Polar VHVTM IXTH3N100P ID25 = 3A Power MOSFET IXTP3N100P RDS(on) 4.8 N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G S Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 150 C 1000 V TO-220 (IXTP) VDGR TJ = 25 C to 150 C, RGS = 1M 1000 V VGSS Continuous 20 V VGSM Transient 30 V (TAB)

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 ixta3n120 ixtp3n120 ixth3n120.pdf

High Voltage VDSS = 1200V IXTA3N120 Power MOSFET ID25 = 3A IXTP3N120 RDS(on) 4.5 IXTH3N120 N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated Fast Intrinsic Diode G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) VDSS TJ = 25 C to 150 C 1200 V VDGR TJ = 25 C to 150 C, RGS = 1M 1200 V VGSS Continuous

 8.5. Size:228K  ixys
 ixta3n60p ixtp3n60p ixty3n60p.pdf

IXTA 3N60P VDSS = 600 V PolarHVTM IXTP 3N60P ID25 = 3.0 A Power MOSFET IXTY 3N60P RDS(on) 2.9 N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS Continuous 30 V G S VGSM Transient 40 V (TAB) ID25 T