IXTP50N25T Todos los transistores

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IXTP50N25T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTP50N25T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 400 W

Tensión drenaje-fuente (Vds): 250 V

Tensión compuerta-fuente (Vgs): 30 V

Tensión umbral compuerta-fuente Vgs(th): 5 V

Corriente continua de drenaje (Id): 50 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 166 nS

Resistencia drenaje-fuente RDS(on): 0.06 Ohm

Empaquetado / Estuche: TO220

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IXTP50N25T Datasheet (PDF)

1.1. ixta50n25t ixtq50n25t ixtp50n25t ixth50n25t.pdf Size:230K _ixys

IXTP50N25T
IXTP50N25T

IXTA50N25T IXTQ50N25T Trench Gate VDSS = 250V IXTP50N25T IXTH50N25T ID25 = 50A Power MOSFET ? ? RDS(on) ? 60m? ? ? ? ? ? ? N-Channel Enhancement Mode TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G G D S S G D (Tab) D D (Tab) D (Tab) S TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 250 V VDGR TJ = 25C to 150C, RGS = 1M? 250 V VGSM Transient

3.1. ixtp50n085t ixty50n085t.pdf Size:171K _ixys

IXTP50N25T
IXTP50N25T

Preliminary Technical Information IXTP50N085T VDSS = 85 V TrenchMVTM IXTY50N085T ID25 = 50 A Power MOSFET ? ? RDS(on) ? 23 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) D (TAB) G D S Symbol Test Conditions Maximum Ratings TO-252 (IXTY) VDSS TJ = 25C to 175C85 V VDGR TJ = 25C to 175C; RGS = 1 M? 85 V G VGSM Transient 20 V S ID25 TC = 25C50 A

 

 5.1. ixtp55n075t ixty55n075t.pdf Size:169K _ixys

IXTP50N25T
IXTP50N25T

Preliminary Technical Information IXTP55N075T VDSS = 75 V TrenchMVTM IXTY55N075T ID25 = 55 A Power MOSFET ? ? RDS(on) ? 19.5 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-220 (IXTP) D (TAB) G D S Symbol Test Conditions Maximum Ratings TO-252 (IXTY) VDSS TJ = 25C to 175C75 V VDGR TJ = 25C to 175C; RGS = 1 M? 75 V VGSM Transient 20 V G ID25 TC = 25C55 A

5.2. ixta5n60p ixtp5n60p.pdf Size:120K _ixys

IXTP50N25T
IXTP50N25T

VDSS = 600 V IXTA 5N60P PolarHVTM ID25 = 5 A IXTP 5N60P Power MOSFET ? ? RDS(on) ? 1.7 ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25C to 175C 600 V VDGR TJ = 25C to 175C; RGS = 1 M? 600 V VGSS Continuous 30 V G VGSM Transient 40 V S (TAB) ID25 TC = 25C5 A TO-220 (IXTP) IDM TC = 25C, pulse

Otros transistores... IXTP460P2 , IXTP48N20T , IXTP48P05T , IXTP4N60P , IXTP4N80P , IXTP50N085T , IXTP50N20P , IXTP50N20PM , BUZ10 , IXTP50N28T , IXTP52P10P , IXTP55N075T , IXTP56N15T , IXTP5N50P , IXTP5N60P , IXTP60N10T , IXTP60N10TM .

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