IXTP56N15T Todos los transistores

 

IXTP56N15T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTP56N15T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 56 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 100 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.036 Ohm
   Paquete / Cubierta: TO220
 

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IXTP56N15T Datasheet (PDF)

 9.1. Size:120K  ixys
 ixta5n60p ixtp5n60p.pdf pdf_icon

IXTP56N15T

VDSS = 600 VIXTA 5N60PPolarHVTMID25 = 5 AIXTP 5N60PPower MOSFET RDS(on) 1.7 N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-263 (IXTA)VDSS TJ = 25C to 175C 600 VVDGR TJ = 25C to 175C; RGS = 1 M 600 VVGSS Continuous 30 VGVGSM Transient 40 VS(TAB)ID25 TC = 25C5 ATO-220 (I

 9.2. Size:186K  ixys
 ixta52p10p ixtp52p10p ixtq52p10p ixth52p10p.pdf pdf_icon

IXTP56N15T

PolarPTM VDSS = - 100VIXTA52P10PID25 = - 52APower MOSFETsIXTP52P10P RDS(on) 50m IXTQ52P10PP-Channel Enhancement ModeAvalanche RatedIXTH52P10PTO-3P (IXTQ)TO-263 AA (IXTA) TO-220AB (IXTP)DGGGSDG SSD (Tab)D D (Tab)S TabSymbol Test Conditions Maximum Ratings TO-247 (IXTH)VDSS TJ = 25C to 150C -100 VVDGR TJ = 2

 9.3. Size:171K  ixys
 ixtp50n085t ixty50n085t.pdf pdf_icon

IXTP56N15T

Preliminary Technical InformationIXTP50N085T VDSS = 85 VTrenchMVTMIXTY50N085T ID25 = 50 APower MOSFET RDS(on) 23 m N-Channel Enhancement ModeAvalanche RatedTO-220 (IXTP)D (TAB)GDSSymbol Test Conditions Maximum RatingsTO-252 (IXTY)VDSS TJ = 25C to 175C85 VVDGR TJ = 25C to 175C; RGS = 1 M 85 VGVGSM Transient 20 V

 9.4. Size:230K  ixys
 ixta50n25t ixtq50n25t ixtp50n25t ixth50n25t.pdf pdf_icon

IXTP56N15T

IXTA50N25T IXTQ50N25TTrench Gate VDSS = 250VIXTP50N25T IXTH50N25TID25 = 50APower MOSFET RDS(on) 60m N-Channel Enhancement ModeTO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ)G GDSSGD (Tab)DD (Tab) D (Tab)STO-247 (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C, RGS = 1M

MOSTRAR MÁS

Otros transistores... IXTP4N80P , IXTP50N085T , IXTP50N20P , IXTP50N20PM , IXTP50N25T , IXTP50N28T , IXTP52P10P , IXTP55N075T , IRF830 , IXTP5N50P , IXTP5N60P , IXTP60N10T , IXTP60N10TM , IXTP60N20T , IXTP60N28TM-A , IXTP62N15P , IXTP64N055T .

History: UTM4953 | IRL520NPBF | IRF7701GPBF | SWF3N80D | IPI65R190CFD | SWF7N65K

 

 
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