IXTP5N50P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXTP5N50P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 89 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 400 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
Paquete / Cubierta: TO220
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IXTP5N50P Datasheet (PDF)
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IXTA50N25T IXTQ50N25TTrench Gate VDSS = 250VIXTP50N25T IXTH50N25TID25 = 50APower MOSFET RDS(on) 60m N-Channel Enhancement ModeTO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ)G GDSSGD (Tab)DD (Tab) D (Tab)STO-247 (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 250 VVDGR TJ = 25C to 150C, RGS = 1M
Otros transistores... IXTP50N085T , IXTP50N20P , IXTP50N20PM , IXTP50N25T , IXTP50N28T , IXTP52P10P , IXTP55N075T , IXTP56N15T , K2611 , IXTP5N60P , IXTP60N10T , IXTP60N10TM , IXTP60N20T , IXTP60N28TM-A , IXTP62N15P , IXTP64N055T , IXTP6N100D2 .
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