IXTP70N075T2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTP70N075T2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 75 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 48 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: TO220

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IXTP70N075T2 datasheet

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IXTP70N075T2

IXTP70N075T2 www.VBsemi.com N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0065at VGS = 10 V 80 80 0.0070at VGS = 6.0 V 75 17.1 nC APPLICATIONS 0.0085at VGS = 4.5 V 65 Primary Side Switching TO-220AB Synchronous Rectification D DC/AC Inverters LED Bac

 6.1. Size:175K  ixys
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IXTP70N075T2

Preliminary Technical Information IXTA70N085T VDSS = 85 V TrenchMVTM IXTP70N085T ID25 = 70 A Power MOSFET RDS(on) 13.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C70 A

 9.1. Size:252K  ixys
 ixta75n10p ixtp75n10p ixtq75n10p.pdf pdf_icon

IXTP70N075T2

IXTA 75N10P VDSS = 100 V PolarHTTM IXTP 75N10P ID25 = 75 A Power MOSFET IXTQ 75N10P RDS(on) 25 m N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G S VDSS TJ = 25 C to 175 C 100 V (TAB) VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGS Continuous 20 V TO-220 (IXTP) VGSM Transient

 9.2. Size:177K  ixys
 ixta76n075t ixtp76n075t.pdf pdf_icon

IXTP70N075T2

Preliminary Technical Information IXTA76N075T VDSS = 75 V TrenchMVTM IXTP76N075T ID25 = 76 A Power MOSFET RDS(on) 12 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C76 A

MOSTRAR MÁS

Otros transistores... IXTP60N10TM, IXTP60N20T, IXTP60N28TM-A, IXTP62N15P, IXTP64N055T, IXTP6N100D2, IXTP6N50D2, IXTP6N50P, IRLB3034, IXTP70N085T, IXTP75N10P, IXTP76N075T, IXTP76N25T, IXTP76P10T, IXTP7N60P, IXTP7N60PM, IXTP80N10T