IXTQ220N055T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTQ220N055T  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 430 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 220 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 70 nS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: TO3P

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IXTQ220N055T datasheet

 ..1. Size:204K  ixys
 ixth220n055t ixtq220n055t.pdf pdf_icon

IXTQ220N055T

Preliminary Technical Information IXTH220N055T VDSS = 55 V TrenchMVTM IXTQ220N055T ID25 = 220 A Power MOSFET RDS(on) 4.0 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25 C to 175 C55 V S VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V VGSM Transient 20 V TO-

 5.1. Size:185K  ixys
 ixth220n075t ixtq220n075t.pdf pdf_icon

IXTQ220N055T

Preliminary Technical Information IXTH220N075T VDSS = 75 V TrenchMVTM IXTQ220N075T ID25 = 220 A Power MOSFET RDS(on) 4.5 m N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C75 V G (TAB) D VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V S VGSM Transient 20 V ID25 TC = 25

 8.1. Size:198K  ixys
 ixth22n50p ixtq22n50p ixtv22n50p.pdf pdf_icon

IXTQ220N055T

IXTH 22N50P VDSS = 500 V PolarHVTM IXTQ 22N50P ID25 = 22 A Power MOSFET IXTV 22N50P RDS(on) 270 m N-Channel Enhancement Mode IXTV 22N50PS Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25 C to 150 C 500 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 30 V TO-3P (IXTQ) VGSM Trans

 8.2. Size:314K  ixys
 ixtq22n60p ixtv22n60p.pdf pdf_icon

IXTQ220N055T

IXTQ 22N60P VDSS = 600 V PolarHVTM IXTV 22N60P ID25 = 22 A Power MOSFET IXTV 22N60PS RDS (on) 350 m N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS Continuous 30 V G D (TAB) S VGSM Tranisent 40 V ID25

MOSTRAR MÁS

Otros transistores... IXTQ180N085T, IXTQ180N10T, IXTQ182N055T, IXTQ18N60P, IXTQ200N06P, IXTQ200N075T, IXTQ200N085T, IXTQ200N10T, IRF4905, IXTQ220N075T, IXTQ22N50P, IXTQ22N60P, IXTQ230N085T, IXTQ23N60Q, IXTQ240N055T, IXTQ24N55Q, IXTQ250N075T