IXTQ24N55Q Todos los transistores

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IXTQ24N55Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTQ24N55Q

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 400 W

Tensión drenaje-fuente (Vds): 550 V

Corriente continua de drenaje (Id): 24 A

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 500 nS

Resistencia drenaje-fuente RDS(on): 0.27 Ohm

Empaquetado / Estuche: TO3P

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IXTQ24N55Q Datasheet (PDF)

4.1. ixth240n055t ixtq240n055t.pdf Size:204K _ixys

IXTQ24N55Q
IXTQ24N55Q

Preliminary Technical Information IXTH240N055T VDSS = 55 V TrenchMVTM IXTQ240N055T ID25 = 240 A Power MOSFET ? ? RDS(on) ? 3.6 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 55 V VGSM Transient 20 V ID25 TC = 25 C 240 A ILRMS Lead Current Limit, R

5.1. ixth250n075t ixtq250n075t.pdf Size:204K _ixys

IXTQ24N55Q
IXTQ24N55Q

Preliminary Technical Information IXTH250N075T VDSS = 75 V TrenchMVTM IXTQ250N075T ID25 = 250 A Power MOSFET ? ? RDS(on) ? 4.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D S VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 75 V TO-3P (IXTQ) VGSM Transient 20 V ID25 TC = 25 C 250 A

5.2. ixtq26n50p ixtt26n50p ixtv26n50p.pdf Size:338K _ixys

IXTQ24N55Q
IXTQ24N55Q

IXTQ 26N50P VDSS = 500 V PolarHVTM IXTT 26N50P ID25 = 26 A Power MOSFET ? ? IXTV 26N50P RDS(on) ? 230 m? ? ? ? ? ? ? IXTV 26N50PS N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 500 V D S D (TAB) VDGR TJ = 25 C to 150 C; RGS = 1 M? 500 V TO-268 (IXTT) VGSS Continuos 30 V VGSM Transient 40 V ID25 TC

5.3. ixth220n075t ixtq220n075t.pdf Size:185K _ixys

IXTQ24N55Q
IXTQ24N55Q

Preliminary Technical Information IXTH220N075T VDSS = 75 V TrenchMVTM IXTQ220N075T ID25 = 220 A Power MOSFET ? ? RDS(on) ? 4.5 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 175C75 V G (TAB) D VDGR TJ = 25C to 175C; RGS = 1 M? 75 V S VGSM Transient 20 V ID25 TC = 25C 220 A TO-3P (IXTQ) ILR

5.4. ixth200n085t ixtq200n085t.pdf Size:205K _ixys

IXTQ24N55Q
IXTQ24N55Q

Preliminary Technical Information IXTH200N085T VDSS = 85 V TrenchMVTM IXTQ200N085T ID25 = 200 A Power MOSFET ? ? RDS(on) ? 5.0 m ? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 85 V VGSM Transient 20 V ID25 TC = 25 C 200 A ILRMS Lead Current Limit,

5.5. ixtq200n06p.pdf Size:149K _ixys

IXTQ24N55Q
IXTQ24N55Q

PolarHTTM VDSS = 60 V IXTQ 200N06P ID25 = 200 A Power MOSFET ? ? RDS(on) ? 6.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 175 C60 V VDGR TJ = 25 C to 175 C; RGS = 1 M? 60 V VGS Transient 30 V VGSM Continuous 20 V G ID25 TC = 25 C 200 A D (TAB) S ID(RMS) External lead current limit 75 A

5.6. ixth220n055t ixtq220n055t.pdf Size:204K _ixys

IXTQ24N55Q
IXTQ24N55Q

Preliminary Technical Information IXTH220N055T VDSS = 55 V TrenchMVTM IXTQ220N055T ID25 = 220 A Power MOSFET ? ? RDS(on) ? 4.0 m ? ? ? ? ? ? ? N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25 C to 175 C55 V S VDGR TJ = 25 C to 175 C; RGS = 1 M? 55 V VGSM Transient 20 V TO-3P (IXTQ) ID25 TC = 25 C 220

5.7. ixth230n085t ixtq230n085t.pdf Size:205K _ixys

IXTQ24N55Q
IXTQ24N55Q

Preliminary Technical Information IXTH230N085T VDSS = 85 V TrenchMVTM IXTQ230N085T ID25 = 230 A Power MOSFET ? ? RDS(on) ? 4.4 m? ? ? ? ? ? ? N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25C to 175C 85 V S VDGR TJ = 25C to 175C; RGS = 1 M? 85 V VGSM Transient 20 V TO-3P (IXTQ) ID25 TC = 25C 230 A I

5.8. ixth200n075t ixtq200n075t.pdf Size:184K _ixys

IXTQ24N55Q
IXTQ24N55Q

Preliminary Technical Information IXTH200N075T VDSS = 75 V Trench Gate IXTQ200N075T ID25 = 200 A Power MOSFET ? ? RDS(on) ? 5.0 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25C to 175C75 V VDGR TJ = 25C to 175C; RGS = 1 M? 75 V VGSM Transient 20 V ID25 TC = 25C 200 A ILRMS Lead Current Limit, RMS 7

5.9. ixtq22n60p ixtv22n60p.pdf Size:314K _ixys

IXTQ24N55Q
IXTQ24N55Q

IXTQ 22N60P VDSS = 600 V PolarHVTM IXTV 22N60P ID25 = 22 A Power MOSFET ? ? IXTV 22N60PS RDS (on) ? 350 m? ? ? ? ? ? ? N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M? 600 V VGS Continuous 30 V G D (TAB) S VGSM Tranisent 40 V ID25 TC = 25 C22 A IDM TC = 25 C,

5.10. ixth22n50p ixtq22n50p ixtv22n50p.pdf Size:198K _ixys

IXTQ24N55Q
IXTQ24N55Q

IXTH 22N50P VDSS = 500 V PolarHVTM IXTQ 22N50P ID25 = 22 A Power MOSFET IXTV 22N50P RDS(on) ? ? ? ? ? 270 m? ? ? ? ? N-Channel Enhancement Mode IXTV 22N50PS Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25C to 150C 500 V S VDGR TJ = 25C to 150C; RGS = 1 M? 500 V VGS Continuous 30 V TO-3P (IXTQ) VGSM Transient 40 V ID25 TC = 25

5.11. ixtt26n60p ixtv26n60p ixtv26n60ps ixth26n60p ixtq26n60p.pdf Size:230K _ixys

IXTQ24N55Q
IXTQ24N55Q

IXTH26N60P VDSS = 600 V PolarHVTM IXTQ26N60P ID25 = 26 A Power MOSFET ? ? IXTT26N60P RDS(on) ? 270 m? ? ? ? ? ? ? N-Channel Enhancement Mode IXTV26N60P Avalanche Rated TO-247 (IXTH) IXTV26N60PS G D S Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 600 V TO-3P (IXTQ) VDGR TJ = 25C to 150C; RGS = 1 M? 600 V VGSS Continuous 30 V VGSM Transient 40 V G D ID25

Otros transistores... IXTQ200N10T , IXTQ220N055T , IXTQ220N075T , IXTQ22N50P , IXTQ22N60P , IXTQ230N085T , IXTQ23N60Q , IXTQ240N055T , J111 , IXTQ250N075T , IXTQ26N50P , IXTQ26N60P , IXTQ26P20P , IXTQ280N055T , IXTQ30N50L , IXTQ30N50L2 , IXTQ30N50P .

 


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