IXTQ24N55Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXTQ24N55Q
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 400 W
Voltaje máximo drenador - fuente |Vds|: 550 V
Corriente continua de drenaje |Id|: 24 A
CARACTERÍSTICAS ELÉCTRICAS
Carga de la puerta (Qg): 80 nC
Tiempo de subida (tr): 500 nS
Resistencia entre drenaje y fuente RDS(on): 0.27 Ohm
Paquete / Cubierta: TO3P
Búsqueda de reemplazo de MOSFET IXTQ24N55Q
IXTQ24N55Q Datasheet (PDF)
ixth240n055t ixtq240n055t.pdf
Preliminary Technical InformationIXTH240N055T VDSS = 55 VTrenchMVTMIXTQ240N055T ID25 = 240 APower MOSFET RDS(on) 3.6 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25 C to 175 C55 VVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VVGSM Transient 20 VID25 TC = 25 C 240
ixth230n085t ixtq230n085t.pdf
Preliminary Technical InformationIXTH230N085T VDSS = 85 VTrenchMVTMIXTQ230N085T ID25 = 230 APower MOSFET RDS(on) 4.4 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsG(TAB)DVDSS TJ = 25C to 175C 85 VSVDGR TJ = 25C to 175C; RGS = 1 M 85 VVGSM Transient 20 VTO-3P (
ixtt26n60p ixtv26n60p ixtv26n60ps ixth26n60p ixtq26n60p.pdf
IXTH26N60P VDSS = 600 VPolarHVTMIXTQ26N60P ID25 = 26 APower MOSFET IXTT26N60P RDS(on) 270 m N-Channel Enhancement ModeIXTV26N60PAvalanche RatedTO-247 (IXTH)IXTV26N60PSGDSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 V TO-3P (IXTQ)VDGR TJ = 25C to 150C; RGS = 1 M 600 VVGSS Continuous 30 VVGSM Tran
ixtq200n06p.pdf
PolarHTTM VDSS = 60 VIXTQ 200N06PID25 = 200 APower MOSFET RDS(on) 6.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum Ratings TO-3P (IXTQ)VDSS TJ = 25 C to 175 C60 VVDGR TJ = 25 C to 175 C; RGS = 1 M 60 VVGS Transient 30 VVGSM Continuous 20 VGID25 TC = 25 C 200 AD(TAB)SID(RMS) E
ixth220n075t ixtq220n075t.pdf
Preliminary Technical InformationIXTH220N075T VDSS = 75 VTrenchMVTMIXTQ220N075T ID25 = 220 APower MOSFET RDS(on) 4.5 m N-Channel Enhancement ModeAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C75 VG(TAB)DVDGR TJ = 25C to 175C; RGS = 1 M 75 VSVGSM Transient 20 VID25 TC = 25
ixth250n075t ixtq250n075t.pdf
Preliminary Technical InformationIXTH250N075T VDSS = 75 VTrenchMVTMIXTQ250N075T ID25 = 250 APower MOSFET RDS(on) 4.0 m N-Channel Enhancement Mode TO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsG(TAB)DSVDSS TJ = 25 C to 175 C75 VVDGR TJ = 25 C to 175 C; RGS = 1 M 75 VTO-3P (IXTQ)VGSM Transient
ixtq26n50p ixtt26n50p ixtv26n50p.pdf
IXTQ 26N50P VDSS = 500 VPolarHVTMIXTT 26N50P ID25 = 26 APower MOSFET IXTV 26N50P RDS(on) 230 m IXTV 26N50PSN-Channel Enhancement ModeAvalanche RatedTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25 C to 150 C 500 VDS D (TAB)VDGR TJ = 25 C to 150 C; RGS = 1 M 500 VTO-268 (IXTT)VGSS Continuos 30 V
ixth22n50p ixtq22n50p ixtv22n50p.pdf
IXTH 22N50P VDSS = 500 VPolarHVTMIXTQ 22N50P ID25 = 22 APower MOSFETIXTV 22N50P RDS(on) 270 m N-Channel Enhancement ModeIXTV 22N50PSAvalanche RatedTO-247 (IXTH)Symbol Test Conditions Maximum RatingsG(TAB)DVDSS TJ = 25C to 150C 500 VSVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 30 VTO-3P (IXTQ)VGSM Trans
ixta26p20p ixth26p20p ixtp26p20p ixtq26p20p.pdf
Preliminary Technical InformationIXTA26P20P VDSS = - 200VPolarPTMIXTH26P20P ID25 = - 26APower MOSFET IXTP26P20P RDS(on) 170m P-Channel Enhancement ModeAvalanche RatedIXTQ26P20PTO-263 (IXTA) TO-247 (IXTH) TO-220 (IXTP)GSGD(TAB)D(TAB)GD(TAB)DS DSSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25C to 175
ixth220n055t ixtq220n055t.pdf
Preliminary Technical InformationIXTH220N055T VDSS = 55 VTrenchMVTMIXTQ220N055T ID25 = 220 APower MOSFET RDS(on) 4.0 m N-Channel Enhancement ModeTO-247 (IXTH)Avalanche RatedSymbol Test Conditions Maximum RatingsG(TAB)DVDSS TJ = 25 C to 175 C55 VSVDGR TJ = 25 C to 175 C; RGS = 1 M 55 VVGSM Transient 20 VTO-
ixth200n085t ixtq200n085t.pdf
Preliminary Technical InformationIXTH200N085T VDSS = 85 VTrenchMVTMIXTQ200N085T ID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25 C to 175 C85 VVDGR TJ = 25 C to 175 C; RGS = 1 M 85 VVGSM Transient 20 VID25 TC = 25 C 20
ixth200n075t ixtq200n075t.pdf
Preliminary Technical InformationIXTH200N075T VDSS = 75 VTrench GateIXTQ200N075T ID25 = 200 APower MOSFET RDS(on) 5.0 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25C to 175C75 VVDGR TJ = 25C to 175C; RGS = 1 M 75 VVGSM Transient 20 VID25 TC = 25C 200 AILRMS
ixtq22n60p ixtv22n60p.pdf
IXTQ 22N60P VDSS = 600 VPolarHVTMIXTV 22N60P ID25 = 22 APower MOSFET IXTV 22N60PS RDS (on) 350 m N-Channel Enhancement ModeAvalanche RatedTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGS Continuous 30 V GD(TAB)SVGSM Tranisent 40 VID25
ixtq26n50p.pdf
isc N-Channel MOSFET Transistor IXTQ26N50PFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-
ixtq22n50p.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXTQ22N50PFEATURESWith TO-3PN packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source
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