IXTQ26N50P Datasheet. Equivalente

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 ixtq26n50p ixtt26n50p ixtv26n50p.pdf

IXTQ 26N50P VDSS = 500 V PolarHVTM IXTT 26N50P ID25 = 26 A Power MOSFET IXTV 26N50P RDS(on) 230 m IXTV 26N50PS N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 500 V D S D (TAB) VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V TO-268 (IXTT) VGSS Continuos 30 V

 ..2. Size:257K  inchange semiconductor
 ixtq26n50p.pdf

isc N-Channel MOSFET Transistor IXTQ26N50P FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-

 7.1. Size:230K  ixys
 ixtt26n60p ixtv26n60p ixtv26n60ps ixth26n60p ixtq26n60p.pdf

IXTH26N60P VDSS = 600 V PolarHVTM IXTQ26N60P ID25 = 26 A Power MOSFET IXTT26N60P RDS(on) 270 m N-Channel Enhancement Mode IXTV26N60P Avalanche Rated TO-247 (IXTH) IXTV26N60PS G D S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V TO-3P (IXTQ) VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGSS Continuous 30 V VGSM Tran

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 ixta26p20p ixth26p20p ixtp26p20p ixtq26p20p.pdf

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 ixth230n085t ixtq230n085t.pdf

Preliminary Technical Information IXTH230N085T VDSS = 85 V TrenchMVTM IXTQ230N085T ID25 = 230 A Power MOSFET RDS(on) 4.4 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25 C to 175 C 85 V S VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V TO-3P (

 9.2. Size:149K  ixys
 ixtq200n06p.pdf

PolarHTTM VDSS = 60 V IXTQ 200N06P ID25 = 200 A Power MOSFET RDS(on) 6.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 175 C60 V VDGR TJ = 25 C to 175 C; RGS = 1 M 60 V VGS Transient 30 V VGSM Continuous 20 V G ID25 TC = 25 C 200 A D (TAB) S ID(RMS) E

 9.3. Size:204K  ixys
 ixth240n055t ixtq240n055t.pdf

Preliminary Technical Information IXTH240N055T VDSS = 55 V TrenchMVTM IXTQ240N055T ID25 = 240 A Power MOSFET RDS(on) 3.6 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 175 C55 V VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V VGSM Transient 20 V ID25 TC = 25 C 240

 9.4. Size:185K  ixys
 ixth220n075t ixtq220n075t.pdf

Preliminary Technical Information IXTH220N075T VDSS = 75 V TrenchMVTM IXTQ220N075T ID25 = 220 A Power MOSFET RDS(on) 4.5 m N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C75 V G (TAB) D VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V S VGSM Transient 20 V ID25 TC = 25

 9.5. Size:204K  ixys
 ixth250n075t ixtq250n075t.pdf

Preliminary Technical Information IXTH250N075T VDSS = 75 V TrenchMVTM IXTQ250N075T ID25 = 250 A Power MOSFET RDS(on) 4.0 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D S VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V TO-3P (IXTQ) VGSM Transient

 9.6. Size:198K  ixys
 ixth22n50p ixtq22n50p ixtv22n50p.pdf

IXTH 22N50P VDSS = 500 V PolarHVTM IXTQ 22N50P ID25 = 22 A Power MOSFET IXTV 22N50P RDS(on) 270 m N-Channel Enhancement Mode IXTV 22N50PS Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25 C to 150 C 500 V S VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 30 V TO-3P (IXTQ) VGSM Trans

 9.7. Size:204K  ixys
 ixth220n055t ixtq220n055t.pdf

Preliminary Technical Information IXTH220N055T VDSS = 55 V TrenchMVTM IXTQ220N055T ID25 = 220 A Power MOSFET RDS(on) 4.0 m N-Channel Enhancement Mode TO-247 (IXTH) Avalanche Rated Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25 C to 175 C55 V S VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V VGSM Transient 20 V TO-

 9.8. Size:205K  ixys
 ixth200n085t ixtq200n085t.pdf

Preliminary Technical Information IXTH200N085T VDSS = 85 V TrenchMVTM IXTQ200N085T ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V ID25 TC = 25 C 20

 9.9. Size:184K  ixys
 ixth200n075t ixtq200n075t.pdf

Preliminary Technical Information IXTH200N075T VDSS = 75 V Trench Gate IXTQ200N075T ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 175 C75 V VDGR TJ = 25 C to 175 C; RGS = 1 M 75 V VGSM Transient 20 V ID25 TC = 25 C 200 A ILRMS

 9.10. Size:314K  ixys
 ixtq22n60p ixtv22n60p.pdf

IXTQ 22N60P VDSS = 600 V PolarHVTM IXTV 22N60P ID25 = 22 A Power MOSFET IXTV 22N60PS RDS (on) 350 m N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS Continuous 30 V G D (TAB) S VGSM Tranisent 40 V ID25

 9.11. Size:209K  inchange semiconductor
 ixtq22n50p.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXTQ22N50P FEATURES With TO-3PN packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source