IXTQ26P20P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXTQ26P20P Datasheet (PDF)

..1. Size:184K ixys
ixta26p20p ixth26p20p ixtp26p20p ixtq26p20p.pdf pdf_icon

Preliminary Technical InformationIXTA26P20P VDSS = - 200VPolarPTMIXTH26P20P ID25 = - 26APower MOSFET IXTP26P20P RDS(on) 170m P-Channel Enhancement ModeAvalanche RatedIXTQ26P20PTO-263 (IXTA) TO-247 (IXTH) TO-220 (IXTP)GSGD(TAB)D(TAB)GD(TAB)DS DSSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25C to 175

8.1. Size:230K ixys
ixtt26n60p ixtv26n60p ixtv26n60ps ixth26n60p ixtq26n60p.pdf pdf_icon

IXTH26N60P VDSS = 600 VPolarHVTMIXTQ26N60P ID25 = 26 APower MOSFET IXTT26N60P RDS(on) 270 m N-Channel Enhancement ModeIXTV26N60PAvalanche RatedTO-247 (IXTH)IXTV26N60PSGDSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 600 V TO-3P (IXTQ)VDGR TJ = 25C to 150C; RGS = 1 M 600 VVGSS Continuous 30 VVGSM Tran

8.2. Size:338K ixys
ixtq26n50p ixtt26n50p ixtv26n50p.pdf pdf_icon

IXTQ 26N50P VDSS = 500 VPolarHVTMIXTT 26N50P ID25 = 26 APower MOSFET IXTV 26N50P RDS(on) 230 m IXTV 26N50PSN-Channel Enhancement ModeAvalanche RatedTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25 C to 150 C 500 VDS D (TAB)VDGR TJ = 25 C to 150 C; RGS = 1 M 500 VTO-268 (IXTT)VGSS Continuos 30 V

8.3. Size:257K inchange semiconductor
ixtq26n50p.pdf pdf_icon

isc N-Channel MOSFET Transistor IXTQ26N50PFEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-

Otros transistores... IXTQ22N60P , IXTQ230N085T , IXTQ23N60Q , IXTQ240N055T , IXTQ24N55Q , IXTQ250N075T , IXTQ26N50P , IXTQ26N60P , 4N60 , IXTQ280N055T , IXTQ30N50L , IXTQ30N50L2 , IXTQ30N50P , IXTQ30N60L2 , IXTQ30N60P , IXTQ32P20T , IXTQ36N30P .