IXTQ30N50P Todos los transistores

 

IXTQ30N50P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXTQ30N50P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 460 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 400 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: TO3P
 

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IXTQ30N50P Datasheet (PDF)

 ..1. Size:336K  ixys
 ixth30n50p ixtq30n50p ixtt30n50p ixtv30n50p.pdf pdf_icon

IXTQ30N50P

VDSS = 500 VIXTH 30N50PPolarHVTMID25 = 30 AIXTQ 30N50PPower MOSFET RDS(on) 200 m IXTT 30N50PN-Channel Enhancement ModeIXTV 30N50PAvalanche RatedIXTV 30N50PSTO-247 AD (IXTH)(TAB)Symbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGSS Continuo

 5.1. Size:142K  ixys
 ixth30n50l2-ixtq30n50l2-ixtt30n50l2.pdf pdf_icon

IXTQ30N50P

IXTH30N50L2 VDSS = 500VLinear L2TM PowerIXTQ30N50L2 ID25 = 30AMOSFET with extended IXTT30N50L2 RDS(on) 200m FBSOADDDDO DON-Channel Enhancement ModeTO-247 (IXTH)RGiwwG OO(TAB)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VTO-3P (IXTQ)VDGR TJ = 25C to 150C, RGS = 1M 500 VVGSS Continu

 7.1. Size:352K  ixys
 ixth30n60p ixtq30n60p ixtt30n60p ixtv30n60p.pdf pdf_icon

IXTQ30N50P

IXTH 30N60P VDSS = 600 VPolarHVTMIXTQ 30N60P ID25 = 30 APower MOSFET IXTT 30N60P RDS(on) 240 m N-Channel Enhancement ModeIXTV 30N60PAvalanche RatedIXTV 30N60PSSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGSS Continuous 30 VVGSM Transient

 7.2. Size:392K  ixys
 ixth30n60p ixtq30n60p ixtt30n60p ixtv30n60p ixtv30n60ps.pdf pdf_icon

IXTQ30N50P

IXTH 30N60P VDSS = 600 VPolarHVTMIXTQ 30N60P ID25 = 30 APower MOSFET IXTT 30N60P RDS(on) 240 m N-Channel Enhancement ModeIXTV 30N60PAvalanche RatedIXTV 30N60PSSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGSS Continuous 30 VVGSM Transient

MOSTRAR MÁS

Otros transistores... IXTQ24N55Q , IXTQ250N075T , IXTQ26N50P , IXTQ26N60P , IXTQ26P20P , IXTQ280N055T , IXTQ30N50L , IXTQ30N50L2 , IRLZ44N , IXTQ30N60L2 , IXTQ30N60P , IXTQ32P20T , IXTQ36N30P , IXTQ36N50P , IXTQ36P15P , IXTQ40N50L2 , IXTQ40N50Q .

History: HGP057N15S | IPD60R1K5CE | CHM4435AZGP | IXTH41N25 | SM6018NSU | NTMFS4C054N | CEM4308

 

 
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