IXTQ30N60P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IXTQ30N60P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 540 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 82 nC
   trⓘ - Tiempo de subida: 500 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.24 Ohm
   Paquete / Cubierta: TO3P

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IXTQ30N60P Datasheet (PDF)

..1. Size:352K ixys
ixth30n60p ixtq30n60p ixtt30n60p ixtv30n60p.pdf

IXTH 30N60P VDSS = 600 VPolarHVTMIXTQ 30N60P ID25 = 30 APower MOSFET IXTT 30N60P RDS(on) 240 m N-Channel Enhancement ModeIXTV 30N60PAvalanche RatedIXTV 30N60PSSymbol Test Conditions Maximum RatingsTO-247 (IXTH)VDSS TJ = 25 C to 150 C 600 VVDGR TJ = 25 C to 150 C; RGS = 1 M 600 VVGSS Continuous 30 VVGSM Transient

..2. Size:392K ixys
ixth30n60p ixtq30n60p ixtt30n60p ixtv30n60p ixtv30n60ps.pdf

..3. Size:210K inchange semiconductor
ixtq30n60p.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IXTQ30N60PFEATURESWith TO-3PN packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

7.1. Size:142K ixys
ixth30n50l2-ixtq30n50l2-ixtt30n50l2.pdf

IXTH30N50L2 VDSS = 500VLinear L2TM PowerIXTQ30N50L2 ID25 = 30AMOSFET with extended IXTT30N50L2 RDS(on) 200m FBSOADDDDO DON-Channel Enhancement ModeTO-247 (IXTH)RGiwwG OO(TAB)SSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 VTO-3P (IXTQ)VDGR TJ = 25C to 150C, RGS = 1M 500 VVGSS Continu

7.2. Size:336K ixys
ixth30n50p ixtq30n50p ixtt30n50p ixtv30n50p.pdf

VDSS = 500 VIXTH 30N50PPolarHVTMID25 = 30 AIXTQ 30N50PPower MOSFET RDS(on) 200 m IXTT 30N50PN-Channel Enhancement ModeIXTV 30N50PAvalanche RatedIXTV 30N50PSTO-247 AD (IXTH)(TAB)Symbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25 C to 150 C 500 VVDGR TJ = 25 C to 150 C; RGS = 1 M 500 VVGSS Continuo

9.1. Size:361K ixys
ixth36n50p ixtq36n50p ixtt36n50p ixtv36n50p.pdf

IXTH 36N50P VDSS = 500 VPolarHVTMIXTQ 36N50P ID25 = 36 APower MOSFET IXTT 36N50P RDS(on) 170 m IXTV 36N50PN-Channel Enhancement ModeAvalanche Rated IXTV 36N50PSTO-3P (IXTQ)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 500 VGVDGR TJ = 25 C to 150 C; RGS = 1 M 500 V(TAB)DSVGS Continuous 30 VVGS

9.2. Size:402K ixys
ixth36n50p ixtq36n50p ixtt36n50p ixtv36n50p ixtv36n50ps.pdf

9.3. Size:252K ixys
ixta36n30p ixtp36n30p ixtq36n30p.pdf

IXTA 36N30P VDSS = 300 VPolarHTTMIXTP 36N30P ID25 = 36 APower MOSFET IXTQ 36N30P RDS(on) 110 m N-Channel Enhancement ModeAvalanche RatedTO-263 (IXTA)Symbol Test Conditions Maximum RatingsVDSS TJ = 25 C to 150 C 300 VGVDGR TJ = 25 C to 150 C; RGS = 1 M 300 VSD(TAB)VGS Continuous 30 VVGSM Transient 40 VTO-220

9.4. Size:212K ixys
ixth32n65x ixtp32n65x ixtq32n65x.pdf

Preliminary Technical InformationX-Class VDSS = 650VIXTP32N65XPower MOSFET ID25 = 32AIXTQ32N65X RDS(on) 135m IXTH32N65XN-Channel Enhancement ModeTO-220AB (IXTP)GD TabSSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VGVGSS Continuous 30 V

9.5. Size:240K inchange semiconductor
ixtq36n50p.pdf

isc N-Channel MOSFET Transistor IXTQ36N50PFEATURESDrain Current I = 36A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.17(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

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